时区:Asia/Shanghai
P5 |
Poster 5@Poster2021年08月27日 12:00~13:30
时刻表 V4 发布时间:2021-08-26 10:02:05 |
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开始 | 结束 | 持续 | 编号 | 标题 |
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P5-WBG Device Applications | ||||
Chair: Song Xiong, Wuhan University of Technology / Deliang Wu, Shanghai University | ||||
12:00 | 12:05 | 5 | 22 |
Design of a High Power Density Bidirectional AC/DC Converter Based on GaNJiajia Guan/Huazhong University of Science and Technology
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12:05 | 12:10 | 5 | 12 |
Dual-Side Three-stage Asymmetric Phase Shift Strategy for Bidirectional Inductive Power Transfer System with SiC Power ModuleHaowen Chen student/Huazhong University of Science and Technology,School of Electrical and Electronic Engineering
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12:10 | 12:15 | 5 | 40 |
A GaN-based High Power-density Power Optimizer for Solar-powered Aircraft Applicationspeng chen/Nanjing University of Aeronautics and Astronautics,College of Automation
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12:15 | 12:20 | 5 | 64 |
Over-Voltage and Oscillation Suppression Circuit with Switching Losses Optimization and Clamping Energy Feedback for SiC MOSFETYang ChengZi/Xi’an Jiaotong University
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12:20 | 12:25 | 5 | 33 |
Improved One Cycle Control for Three-Phase Three-Wire VIENNA RectifierJunnan Gu/Shanghai University
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12:25 | 12:30 | 5 | 18 |
Design Methodology of SiC MOSFET Based Bidirectional CLLC Resonant Converter for Wide Battery Voltage RangeMingjie Liu/State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Huazhong University of Science and Technology, Wuhan, P. R. China
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12:30 | 12:35 | 5 | 54 |
Research on A Novel Parallel Resonant DC Link Soft-switching Inverter Based on SiC MOSFETSi Li doctoral candidate/Harbin Institute of Technology
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12:35 | 12:40 | 5 | 32 |
Research on strategy of parallel wide range bidirectional DC DC converterZehui Peng/Shanghai University
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12:40 | 12:45 | 5 | 29 |
Soft Precharging Method for Four-Level Hybrid-Clamped ConverterYihui Zhao/Chongqing university
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12:45 | 12:50 | 5 | 23 |
Active Magnetic Bearing Amplifier Design based on SiC DevicesGang Cao/Huazhong University of Science and Technology
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12:50 | 12:55 | 5 | 30 |
Design and Verification of Gate Driver for 6.5 kV SiC MOSFET ModuleYijian Wang/Huazhong University of Science and Technology
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12:55 | 13:00 | 5 | 52 |
A Novel ACDC Single-Phase Bridgeless SEPIC PFC Converter With Reduced Conduction Losses and Simple StructureXiang Lin/Shanghai University
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13:00 | 13:05 | 5 | 68 |
Power Cycling Capabilities of Bond Buffer Technologies for Wide Bandgap Power DevicesNan Jiang/Guangdon Academy of Sciences
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13:05 | 13:10 | 5 | 8 |
DC Transform Circuit Design Based on Multiplier RectificationPenghui Yin/Huazhong University of Science and Technology,State Key Laboratory of Advanced Electromagnetic Engineering and Technology
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13:10 | 13:15 | 5 | 46 |
LLC Resonant Converter Based on Trench Gate SiC MOSFETJinkun Chu/Anhui University of Technology
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13:15 | 13:20 | 5 | 59 |
Fractional-Order Model Predictive Control of SiC PFC ConverterQihui Fu/Hunan University
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13:20 | 13:25 | 5 | 49 |
Mode Switchover Strategy for Multi-port Energy Router Based on State Flow DiagramZhiguo Wei/,China University of Geosciences (Wuhan)
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13:25 | 13:30 | 5 | 42 |
An Integrated GaN-Based Power Module Based on the Cooling-System-Inductor StructureLongyang Yu/Xi'an Jiaotong University
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13:30 | 13:35 | 5 | 81 |
An Intergrated Buck-Boost Converter with SRC for Wide Input VoltageYanqing Wang/China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology
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P4 |
Poster 4@Poster2021年08月27日 12:00~13:30
时刻表 V4 发布时间:2021-08-26 10:02:05 |
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开始 | 结束 | 持续 | 编号 | 标题 |
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P4-WBG Device Reliability | ||||
Chair: Yi Liu, Wuhan University of Technology / Donghai Zhu, Huazhong University of Science and Technology | ||||
12:00 | 12:05 | 5 | 53 |
Comparison of the Influence of Reverse Conduction on EMI of WBG And Si Devices
Ru Zhang/School of Electrical Engineering, Xi’an Jiaotong University
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12:05 | 12:10 | 5 | 4 |
An Improved Desaturation Protection Method with Self-Adaptive Blanking-Time for Silicon Carbide (SiC) Power MOSFETsJiawei Li/Huazhong University of Science and Technology
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12:10 | 12:15 | 5 | 63 |
Degradation behavior and mechanism of SiC power MOSFETs by total ionizing dose irradiation under different gate voltagesKexin Gao/Xiangtan University
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12:15 | 12:20 | 5 | 9 |
Single-Pulse Avalanche Failure Characterization of Single and Paralleled SiC MOSFETsHua Mao/Chongqing university
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12:20 | 12:25 | 5 | 14 |
Modeling and Experimental Verification of Common Mode Crosstalk with Shield Cables in Power Converter SystemRuizhou Xue/Huazhong University of Science and Technology
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12:25 | 12:30 | 5 | 39 |
Influence of CucorAl wire bonding on reliability of SiC devicesFang Chao/Zhuzhou CRRC Times Semiconductor Co., Ltd.
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12:30 | 12:35 | 5 | 27 |
Short-circuit Protection Circuit of SiC MOSFET Based on Drain-source Voltage IntegralZhidong Qiu/Beijing Jiaotong University
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12:35 | 12:40 | 5 | 60 |
Design of Aging Test System for SiC MOSFET ModulesChaoyue Shen Student/Shanghai University,School of Mechatronic Engineering and Automation
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12:40 | 12:45 | 5 | 50 |
Degradation mechanism of AlGaN/GaN HEMT based on high temperature reverse bias stressMeng Lu/Xiangtan University
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12:45 | 12:50 | 5 | 48 |
A Dynamic Current Sharing Method in Multi-chip SiC Power Module Using Stacked DBC Bridges and Decoupling Capacitors Based on the Original Simple Module LayoutJianwei Lv/Huazhong University of Science and Technology
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12:50 | 12:55 | 5 | 36 |
EMI Noise Reduction in GaN-based Full-bridge LLC ConverterYue Cao Student/Xi'an Jiaotong University
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P3 |
Poster 3@Poster2021年08月27日 12:00~13:30
时刻表 V4 发布时间:2021-08-26 10:02:05 |
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开始 | 结束 | 持续 | 编号 | 标题 |
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P3-WBG Device Modeling | ||||
Chair: Zhijian Fang, China University of Geosciences / Hao Feng, Chongqing University | ||||
12:00 | 12:05 | 5 | 43 |
Dynamic gate leakage current of p-GaN Gate AlGaN/GaN HEMT under positive bias ConditionsYu Sun/Institute of Microelectronics, Peking University;Chun Han/Peking University
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12:05 | 12:10 | 5 | 44 |
Design, Fabrication and Characterization of 6.5 kV/100A 4H-SiC PiN RectifierMengling Tao/University of Electronic Science and Technology of China
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12:10 | 12:15 | 5 | 13 |
Analytical Averaged Loss Model of a Three-level NPC-type Converter With SiC DevicesXinyue Guo/Huazhong University of Science and Technology,School of Electrical and Electronic Engineering
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12:15 | 12:20 | 5 | 66 |
An Accurate Crosstalk Evaluation and Prediction Method for SiC MOSFET Considering Nonlinear Capacitance and Stray ParametersHuaqing Li student/Xi'an Jiaotong University
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12:20 | 12:25 | 5 | 7 |
The Influence of Gate Resistances on the Turn-on Behaviors of Si/SiC Hybrid SwitchXiaofeng Jiang/Chongqing university
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12:25 | 12:30 | 5 | 69 |
Modeling and comparison of switching loss between SiC MOSFETs with current source and voltage source gate driverQuan Zheng/Huazhong University of Science and Technology,School of Electrical and Electronic Engineering
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12:30 | 12:35 | 5 | 45 |
Modeling and Analysis of the Switching Characteristics Difference for Paralleling SiC MOSFETs in Multichip Power ModulesWenyu Li/Fudan University, China, Shanghai, 200433
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12:35 | 12:40 | 5 | 10 |
Power Loss Characterictics comparsion of the Modular Multilevel Multilevel Converter Based on Based on Si IGBT and SiC MOSFETTianxiang Yin/Huazhong University of Science and Technology
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12:40 | 12:45 | 5 | 41 |
A Survey on Modeling of SiC IGBTYuwei Wu/Xi’an Jiaotong University
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12:45 | 12:50 | 5 | 47 |
Automated SiC MOSFET Power Module Switching Characterization Test PlatformShuhao Yang/Fudan University
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12:50 | 12:55 | 5 | 67 |
Modeling and Suppression of Crosstalk of SiC MOSFET in Bidirectional Buck/Boost ConverterHao Zhang/TAIYUAN UNIVERSITY OF TECHNOLOGY
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12:55 | 13:00 | 5 | 61 |
A Lossless and Passive Voltage Spikes Clamping Circuit for SiC HERIC InverterYong Li/Huazhong University of Science and Technology
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13:00 | 13:05 | 5 | 62 |
Investigation on Parameter Extraction for An Improved Fourier-Series-Based NPT IGBT ModelYifei Ding/Hunan University
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P2 |
Poster 2@Poster2021年08月27日 12:00~13:30
时刻表 V4 发布时间:2021-08-26 10:02:05 |
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开始 | 结束 | 持续 | 编号 | 标题 |
---|---|---|---|---|
P2-WBG Device Packaging | ||||
Chair: Yi Liu, Huazhong University of Science and Technology / Qingqing He, Wuhan University of Technology | ||||
12:00 | 12:05 | 5 | 24 |
Electrical Insulation Packaging for High Voltage High Power IGBT Modules using Nonlinear Conductivity CompositesKaixuan Li Doctoral Candidate/XJTU
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12:05 | 12:10 | 5 | 28 |
Design and Research on Package Insulation of Highvoltage Silicon Carbide ModuleYang Zhou/Global Energy Interconnection Research Institute Co.,Ltd
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12:10 | 12:15 | 5 | 55 |
Power Semiconductor IGBT Packaging Technology and ReliabilityYameng Sun student/Wuhan University
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12:15 | 12:20 | 5 | 17 |
Evaluating Switching Performance of GaN HEMT Using Analytical ModelingYingzhe Wu/University of Electronic Science and Technology of China
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12:20 | 12:25 | 5 | 34 |
Comparative Study of Thermal Performance of a SiC MOSFET Power Module Integrated with Vapor Chamber for Traction Inverter ApplicationsWei Mu/Xi'an Jiaotong University
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12:25 | 12:30 | 5 | 38 |
The Method for Decoupling the Parasitic Inductance of the Laminated Busbar with SiC MOSFETs in ParallelShaolin Yu/HeFei University of Technology
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12:30 | 12:35 | 5 | 19 |
A Low Winding Loss Magnetic Circuit Structure Design of Planar Inductance for GaN-based Totem-Pole PFCPengyuan Ren/School of Electrical Engineering, Xi'an Jiaotong University
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12:35 | 12:40 | 5 | 58 |
GaN HEMT with current-driven gate and its driving circuit designQingliang Song principal engineer/Infineon Technologies
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12:40 | 12:45 | 5 | 51 |
Ultra-thin Coupled Inductor for a GaN-Based CRM Buck ConverterMing Hua/Nanjing Research Institute of Electronics Technology
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12:45 | 12:50 | 5 | 3 |
A Compact 175℃ High Temperature Gate Driver with Isolated Power Supply and Advanced Protection for HybridPACK Drive SiC Power ModuleCheng Qian/Huazhong University of Science and Technology
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12:50 | 12:55 | 5 | 6 |
An Optimal Design Scheme of Intermediate Bus Voltage for two-stage LLC Resonant Converter Based on SiC MOSFETfeng wang/Huazhong University of Science and Technology,State Key Laboratory of Advanced Electromagnetic Engineering and Technology
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08月25日
2021
08月27日
2021
摘要截稿日期
摘要录用通知日期
终稿截稿日期
报告提交截止日期
注册截止日期
2025年08月15日 中国 Beijing
The 2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia2025年08月15日 中国 Beijing
2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia2023年08月27日 台湾-中国 Hsinchu
2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia2018年05月17日 中国 xian
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia