Automated SiC MOSFET Power Module Switching Characterization Test Platform
编号:47 访问权限:公开 更新:2021-08-20 17:55:22 浏览:205次 张贴报告

报告开始:2021年08月27日 12:21(Asia/Shanghai)

报告时间:1min

所在会场:[P] Poster [P1] Poster 1

摘要
To address the problems of large test error and low efficiency in switching characterization test of wide-bandgap (WBG) power semiconductor devices, an automated high accuracy switching performance test platform for SiC MOSFET power module is proposed. This paper focuses on optimizing the design of hardware and software which can efficiently, accurately and safely obtain switching characteristics parameters of SiC MOSFET power module by double pulse test (DPT), as well as short-circuit test and body diode reverse recovery test to acquire more comprehensive switching behaviors of the devices under test (DUT). Real-time test results can be achieved. The multi-process test is serial, and the test data can be compared and managed using a database system. The design principles are experimentally verified by testing the Cree 1.2kV SiC MOSFET power module.
关键词
Switching Characterization,SiC MOSFETs Modules,Automated Test Platform,Double Pulse Test
报告人
Shuhao Yang
Fudan University

稿件作者
Shuhao Yang Fudan University
Saijun Mao Fudan University
Zhikun Wang Fudan University
Xi Lu UniSiC Technology (Shanghai) Co., Ltd.
Jun Chen UniSiC Technology (Shanghai) Co., Ltd.
Hansen Chen UniSiC Technology (Shanghai) Co., Ltd.
Keqiu Zeng Philips Healthcare (Suzhou) Co.,Ltd.
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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