Comparison of the Influence of Reverse Conduction on EMI of WBG And Si Devices
编号:53 访问权限:公开 更新:2021-08-21 10:57:21 浏览:164次 张贴报告

报告开始:2021年08月27日 12:15(Asia/Shanghai)

报告时间:1min

所在会场:[P] Poster [P1] Poster 1

摘要
Silicon carbide (SiC) metal-oxide -semiconductor field effect transistor (MOSFET) and gallium nitride (GaN) high electron mobility transistor (HEMT), are widely used in power electronics due to their fast switching speed. However, the increasing switching speed will cause more serious electromagnetic interference (EMI) problems. To compare the EMI generated by wide bandgap (WBG) devices and Si counterparts, a datasheet-based analytical method to predict the EMI of different devices is proposed here. What’s more, a
parameter n is defined to analyze and compare the influence of the reverse conduction of Si, SiC and GaN on high-frequency EMI. The result reveals that the larger n is, the more serious the effect of reverse conduction on EMI. The DPT experiments of Si, SiC and GaN devices were carried out, which verified the accuracy of the above analysis
 
关键词
Electromagnetic interference (EMI), gallium nitride (GaN), high voltage direct current (HVDC), reverse conduction,silicon carbide (SiC)
报告人
Ru Zhang
School of Electrical Engineering; Xi’an Jiaotong University

稿件作者
Ru Zhang School of Electrical Engineering; Xi’an Jiaotong University
Wenjie Chen State Key Laboratory of Electrical Insulation and Power Equipment Xi’an Jiaotong University
Yuxuan Chen Xi'an Jiaotong University;cyx1998@stu.xjtu.edu.cn
Yue Cao State Key Laboratory of Electrical Insulation and Power Equipment Xi’an Jiaotong University
Ruitao Yan State Key Laboratory of Electrical Insulation and Power Equipment Xi’an Jiaotong University
旭 杨 State Key Laboratory of Electrical Insulation and Power Equipment Xi’an Jiaotong University
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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