Influence of CucorAl wire bonding on reliability of SiC devices
编号:39 访问权限:公开 更新:2021-07-21 20:02:14 浏览:157次 张贴报告

报告开始:2021年08月27日 12:29(Asia/Shanghai)

报告时间:1min

所在会场:[P] Poster [P1] Poster 1

摘要
With the continuous development of power electronics technology, the performance requirements for high-power semiconductor devices are also increasing, such as improving device rated power, reducing device volume, increasing power density and increasing working temperature. In this paper, the effects of Al bonding wire and CucorAl bonding wire on the power cycling capability of SiC devices are studied by experiment and numerical simulation. The power cycling fatigue life of different bonding wires was obtained through the power cycling test of SiC substrate bonded by Al wires and CucorAl wires. The experimental result shows that the power cycling ability of CucorAl wires is higher than that of Al wires.
关键词
Wire Bond,SiC,power cycling
报告人
Fang Chao
Zhuzhou CRRC Times Semiconductor Co., Ltd.

稿件作者
Fang Chao Zhuzhou CRRC Times Semiconductor Co., Ltd.
Xiang Tang Zhuzhou CRRC Times Semiconductor Co., Ltd.
Guangyuan Qin Zhuzhou CRRC Times Semiconductor Co., Ltd.
Haotao Ke Zhuzhou CRRC Times Semiconductor Co., Ltd.
Yibo Wu Zhuzhou CRRC Times Semiconductor Co., Ltd.
Jing Zhang Heraeus Materials Technology Shanghai Ltd.
Guiqin Chang Zhuzhou CRRC Times Semiconductor Co., Ltd.
Haihui Luo Zhuzhou CRRC Times Semiconductor Co., Ltd.
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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