The Method for Decoupling the Parasitic Inductance of the Laminated Busbar with SiC MOSFETs in Parallel
编号:38 访问权限:公开 更新:2021-07-21 20:02:14 浏览:170次 张贴报告

报告开始:2021年08月27日 12:30(Asia/Shanghai)

报告时间:1min

所在会场:[P] Poster [P1] Poster 1

摘要
The discrete SiC MOSFETs are usually paralleled to increase the current capability for high power application. However, the asymmetrical parasitic inductance of the laminated busbar used to connect the parallel SiC MOSFETs may cause the current imbalance. Thus, a symmetrical busbar design is critical for the parallel application of the discrete SiC MOSFETs. While, mutual coupling between the parallel branches, and with the increase in the parallel devices can lead to a very complex inductance network. It is not convenient for the prediction of the current balance and determining the symmetry of the busbar. Based on it, this paper proposes a decoupling method to obtain the equivalent inductance that can easily evaluate the current sharing performance, and further guide the symmetry design of the busbar. A specific laminated busbar with six devices in parallel for EV inverter is analyzed to prove the above method, which is verified by simulation and experimental tests.
 
关键词
SiC MOSFETs, laminated busbar, parasitic inductance networks, decoupling, the equivalent inductance
报告人
Shaolin Yu
HeFei University of Technology

稿件作者
Shaolin Yu HeFei University of Technology
Jianing Wang HeFei University of Technology
兴 张 合肥工业大学
Yuanjian Liu HeFei University of Technology
Zhaoyan Wei HeFei University of Technology
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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