A Novel SiC Trench MOSFET Structure with Enhanced Short Circuit Robustness
编号:15 访问权限:公开 更新:2021-07-21 20:00:47 浏览:144次 张贴报告

报告开始:2021年08月27日 12:52(Asia/Shanghai)

报告时间:1min

所在会场:[P] Poster [P1] Poster 1

摘要
It is well known that SiC trench-gate MOSFET has advantage in conduction performance with narrower cell pitch, higher channel mobility and lower specific on-resistance (Rdson,sp) compared to planar-gate MOSFET. However, the high electrical field in gate oxide at the corner of the trench is the major concern for the trench-gate MOSFET, which may cause device degradation and/or device failure[1]. To resolve this issue, J. Tan introduced a P+ implant region under the gate trench to provide electric field shielding and protect the gate oxide[2] as shown in Fig.1(a). The device structure is designated as P-implanted TMOS in this work. The P+ implant region would make the effective N-epi layer for blocking voltage thinner, thus making device breakdown voltage lower. And, additional connection path between the P+ implant and the source electrode should be provided to recover charge during the switch-on transient. In this paper, a novel SiC trench MOSFET (named N-implanted TMOS) with N-implant region introduced under the gate trench is proposed, as shown in Fig.1(b). The comparsion study between the two devices with regard to static characteristic performance and short circuit robustness are carried out in this work. The key structural parameters of the two devices are listed in Table 1.
 
关键词
SiC trench MOSFET,short circuit capability
报告人
Chongyu Jiang
graduate student Zhejiang University

稿件作者
Chongyu Jiang Zhejiang University
Hongyi Xu Zhejiang University
Na Ren Zhejiang University
Qing Guo Zhejiang University
Kuang Sheng Zhejiang University
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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