Low Roughness SiC Trench Formed by ICP Etching with Sacrificial Oxidation and Ar Annealing Treatment
编号:26
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更新:2021-07-29 17:24:29
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摘要
In this paper, the SiC trench with low roughness was formed using ICP etching. A simple post-trench treatment of sacrificial oxidation and Ar annealing was developed to improve the trench surface quality. The sacrificial oxidation can smooth the trench sidewall and eliminate most of the step bunching. Ar annealing further reduce the roughness of the trench sidewall and simultaneously improve the trench shape. Through adopting the post-trench treatment the RMS roughness of the trench sidewall was reduced from 5.25nm to 0.5nm below.
关键词
SiC,ICP etching,Annealing,Trench
稿件作者
Changwei Zheng
Zhuzhou CRRC Times Electric Company Ltd.
Yafei Wang
Zhuzhou CRRC Times Electric Company Ltd.
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