Dynamic gate leakage current of p-GaN Gate AlGaN/GaN HEMT under positive bias Conditions
编号:43 访问权限:公开 更新:2021-08-08 19:02:46 浏览:209次 张贴报告

报告开始:2021年08月27日 12:25(Asia/Shanghai)

报告时间:1min

所在会场:[P] Poster [P1] Poster 1

摘要
Among the methods to implement E-mode AlGaN/GaN HEMT, the p-GaN gate AlGaN/GaN HEMT, which has controllable process and good reliability, has drawn a lot of attention now. A Schottky contact on the p-GaN would further reduce the forward leakage current comparing with the ohmic one. However, the floating p-GaN sandwiched between the gate metal and AlGaN barrier will introduce some problems in normal operation. In this work, for commercial 100 V rating p-GaN AlGaN/GaN HEMTs, we observe the drift of threshold voltage (Vth) and a dynamic change of gate current during forward gate bias stress. As the voltage and stress time increases, the threshold voltage shifts more to the positive direction, and the drift appears to be permanent up to more than 1000 s. On the other hand, a bell shaped gate leakage current with stress time is observed for stress bias larger than 6 V. A model based on dynamic distribution of electron trap during stress is proposed to explain the phenomenon.
关键词
p-GaN,E-mode GaN HEMT
报告人
Yu Sun
Institute of Microelectronics; Peking University

Chun Han
Peking University

稿件作者
Yu Sun Institute of Microelectronics; Peking University
Maojun Wang Peking University
Wen Lei Peking University;Institute of Microelectronics
Chun Han Peking University;Institute of Microelectronics
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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