Design of a High Power Density Bidirectional AC/DC Converter Based on GaN
编号:22 访问权限:公开 更新:2021-08-20 20:48:46 浏览:558次 张贴报告

报告开始:2021年08月27日 12:45(Asia/Shanghai)

报告时间:1min

所在会场:[P] Poster [P1] Poster 1

摘要
Traditional Si-based semiconductors have a large reverse recovery charge, which brings great challenges to the application of totem-pole bridgeless PFC. With the rise of the third-generation semiconductor device SiC/GaN, totem-pole bridgeless PFC has gradually attracted people's attention. This paper designs a high-power density, high-efficiency bidirectional AC/DC converter based on GaN HEMTs. When working in the forward direction, the totem-pole bridgeless PFC is connected to a synchronous Buck to realize 220V@AC input, and 300V to 400V@DC 1A constant current output; When working in the reverse direction, Boost is connected to a unipolar inverter to achieve 300V to 400V@DC input, 220V 1.5A@AC output, and the output frequency and phase can follow the reference sinusoidal signal. The converter can realize 400W power conversion, with a peak efficiency of 97.2% and power density of 85W/inch3.
关键词
Totem-pole bridgeless PFC,GaN,High power density
报告人
Jiajia Guan
Huazhong University of Science and Technology

稿件作者
Jiajia Guan Huazhong University of Science and Technology
Zhiwei Wang Huazhong University of Science and Technology
Ziyan Tang Huazhong University of Science and Technology
Jianwei Lv Huazhong University of Science and Technology
Cai Chen Huazhong University of Science and Technology;State Key Laboratory of Advanced Electromagnetic Engineering and Technology
Yong Kang Huazhong University of Science and Technology;School of Electrical and Electronic Engineering
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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