Influence of the Interface Traps Distribution on I-V and C-V Characteristics of SiC MOSFET Evaluated by TCAD Simulations
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报告开始:2021年08月27日 12:46(Asia/Shanghai)

报告时间:1min

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摘要
Summary
This paper evaluates the influence of the interface traps distribution on the I-V (ID-VGS) and C-V(CG-VG) characteristics of SiC MOSFET by TCAD simulations. Firstly, a TCAD model of commercial SiC MOSFET is established. Then, the effect of the interface traps distribution on the ID-VGS and CG-VG characteristics of SiC MOSFET is studied in detail under different trap types and energy levels. Moreover, the correlation between ID-VGS and CG-VG curves is analyzed. The acceptor traps close to EV or the donor traps close to EC cause the overall CG-VG curve to shift. Moreover, the influence of the interface traps on VTH reflected in the CG-VG curve is consistent with that in ID-VGS. The analysis in this paper is a support in the comprehension of interface traps distribution and the calibration of the TCAD model of SiC MOSFET.

Motivation
Limited by the material properties and the processing technology, the interface state density of SiC/SiO2 is nearly two to three orders of magnitude higher than that of the Si/SiO2, which causes a series of reliability issues of SiC MOSFET[1]. TCAD simulator is a consolidated tool for modeling power semiconductor devices. However, the complicated interface traps distribution that is difficult to obtain accurately leads to the inaccuracy of TCAD simulation. Therefore, it is very important to evaluate the interface traps by TCAD, which helps to establish an accurate TCAD model. Some researchers have analyzed the influence of interface traps distribution on the C-V characteristics by TCAD[2]. In literature 3, the effect of interface traps on VTH hysteresis is studied[3]. However, the comprehensive analysis and the correlation between the influence of the interface traps on the I-V and C-V characteristics of SiC MOSFET remains to be explored.

Results
In this paper, the TCAD model of a vertical 1200V SiC MOSFET is established first, as shown in Fig. 1. The model is calibrated under the condition that only the acceptor traps close to EC are considered2. The ID-VGS and CG-VG of the model are almost consistent with the product after calibrating. Secondly, the effect of type and energy level of the interface traps on the ID-VGS, VTH, and μni is studied in detail and the results are shown in Fig. 2-4. The VTH increases whether the acceptor traps are close to EC or EV. However, it decreases with the donor traps located near the EC and hardly affected by the donor traps located near the EV. Moreover, it can be seen from the slope of the ID-VGS curves that the μni almost no change when the acceptor traps of the same density change from EC to EV. But the μni increases for the donor traps with the same change. Then, Fig. 5-6 show the CG-VG curves extracted under the above conditions. The relationship between the influence of interface traps on C-V and I-V is revealed. In conclusion, the overall CG-VG curve shifts when there are acceptor traps near the EV or donor traps near the EC. This reflects the change in VTH and flat band voltage VFB, which is consistent with the results of ID-VGS. A more accurate interface traps distribution and TCAD model of SiC MOSFET can be obtained under the combination of the analysis in this paper and the measurement of the I-V and C-V characteristics.
 
[1] Afanasev V V, et al. Intrinsic SiC/SiO2 Interface States[J]. physica status solidi (a), 1997, 162(1):321-337.
[2] Maresca L, et al. Influence of the SiC/SiO2 SiC MOSFET interface traps distribution on C-V measurements evaluated by TCAD simulations[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2019, PP (99):1-1.
[3] Cascino S, et al. Modeling of Threshold Voltage Hysteresis in SiC MOSFET Device[J]. Materials Science Forum, 2020, 1004:671-679.
关键词
Interface Traps,SiC MOSFET,I-V and C-V Characteristics,TCAD Simulations
报告人
yumeng cai
North China Electric Power University

稿件作者
yumeng cai North China Electric Power University
Hao Xu North China Electric Power University
Peng Sun North China Electric Power University
Zhibin Zhao North China Electric Power University
Zhong Chen UNIVERSITY OF ARKANSAS
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

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IEEE
IEEE ELECTRONIC DEVICE SOCIETY
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Huazhong University of Science and Technology
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