Research on A Novel Parallel Resonant DC Link Soft-switching Inverter Based on SiC MOSFET
编号:54 访问权限:公开 更新:2021-07-21 20:02:23 浏览:565次 张贴报告

报告开始:2021年08月27日 12:14(Asia/Shanghai)

报告时间:1min

所在会场:[P] Poster [P1] Poster 1

摘要
In order to realize a silicon carbide (SiC) MOSFET soft-switching inverter with high efficiency, low voltage stress and convenient control, a novel parallel resonant DC link soft-switching inverter is proposed in this paper. It can realize zero-voltage turn-on/off of main switch in the inverter bridge and zero-voltage/current turn-on/off of auxiliary switch in the auxiliary circuit, and it is convenient to control without setting inductor current threshold. At the same time, it avoids using coupled inductor and split capacitor which reduce power density, and the latter will also bring neutral point potential drift. The control of soft-switching inverter is simple and independent of load conditions, and the required time of transition process can be freely selected. In this paper, under the proposed modulation strategy, according to the equivalent circuit in the different work modes, the operation principle, soft-switching realization conditions and parameter design methods of the inverter are analyzed. At last, a 5kW prototype is made by using SiC MOSFET as switching device, and the effectiveness of the inverter is verified by experiments.
关键词
SiC MOSFET,soft-switching,zero-current,zero-voltage,parallel resonant DC link inverter
报告人
Si Li
doctoral candidate Harbin Institute of Technology

稿件作者
Si Li Harbin Institute of Technology
Ming Yang Harbin Institute of Technology
Yu Ma Harbin Institute of Technology
Dianguo Xu Harbin Institute of Technology
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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