Evaluating Switching Performance of GaN HEMT Using Analytical Modeling
编号:17 访问权限:公开 更新:2021-08-05 19:48:21 浏览:178次 张贴报告

报告开始:2021年08月27日 12:50(Asia/Shanghai)

报告时间:1min

所在会场:[P] Poster [P1] Poster 1

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摘要
Evaluating switching performance of the gallium nitride high electron mobility transistor (GaN HEMT) is critical for its application in power converter/inverter. In this paper, an analytical model is proposed to comprehensively evaluate switching characteristics of GaN HEMT. The model has considered nonlinear junction capacitance as well as forward and reverse transconductance, skin effect during oscillation period, and interactions between high- and low-side GaN HEMTs. As a result, the switching losses, switching oscillation, and crosstalk issue during switching transient can be correctly reflected together. Comparisons between simulation and experiment results manifest that the model can evaluate switching performance of the GaN HEMT in higher accuracy compared with other existing models. Consequently, the model is expected to provide many valuable design references in applying GaN HEMT.
 
关键词
GaN HEMT,Switching Characterization,Modeling
报告人
Yingzhe Wu
University of Electronic Science and Technology of China

稿件作者
Yingzhe Wu University of Electronic Science & Technology of China
Shan Yin University of Electronic Science Technology of China
Hui Li University of Electronic Science & Technology of China
Minghai Dong University of Electronic Science & Technology of China
Xi Liu University of Electronic Science and Technology of China
Yuhua Cheng University of Electronic Science and Technology of China
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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