Comparative Study of Thermal Performance of a SiC MOSFET Power Module Integrated with Vapor Chamber for Traction Inverter Applications
编号:34 访问权限:公开 更新:2021-08-17 22:21:26 浏览:191次 张贴报告

报告开始:2021年08月27日 12:33(Asia/Shanghai)

报告时间:1min

所在会场:[P] Poster [P1] Poster 1

摘要
Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) has the potential to replace silicon-based insulated gated bipolar transistors (IGBT) in medium voltage range for the superiority of wide bandgap (WBG) devices. However, SiC MOSFET has a much smaller die size than Si IGBT, which makes its thermal resistance high and the thermal capacitance low. In real applications, the shrinkage in die size will lead to higher junction temperature and more significant junction temperature swing, reducing the lifetime and the reliability of the SiC power module. This paper proposes a new packaging design based on vapor chamber (VC) and compares its thermal performance with a conventional DBC module. Utilizing similar working principles as the heat pipes, VCs have advantages including high thermal conductivity, low weight and low cost. In this paper, the VCs are customized and integrated into the SiC power module with a new fabrication process. The FEM simulations along with the experiment demonstrated significant improvements on both steady-state and transient thermal performance compared with conventional direct bonded copper (DBC) substrate. The maximum junction temperature is reduced by more than 31.7℃ and the junction temperature swing is reduced by 46%. By comparing the thermal performance between the conventional module and VC integrated module, this paper reveals the effectiveness of integrating phase-change cooling components into SiC power modules.
关键词
SiC Power Module Packaging,Thermal Management,Vapor Chamber,Traction Inverter
报告人
Wei Mu
Xi'an Jiaotong University

稿件作者
Wei Mu Xi'an Jiaotong University
Binyu Wang Xi'an Jiaotong University
Shenghe Wang State Grid Anhui Electric Power Co.
Haoyuan Jin Xi’an Jiaotong University
Huaqing Li Xi'an Jiaotong University
Laili Wang Xi'an Jiaotong University
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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