Design, Fabrication and Characterization of 6.5 kV/100A 4H-SiC PiN Rectifier
编号:44 访问权限:公开 更新:2021-07-21 20:02:17 浏览:154次 张贴报告

报告开始:2021年08月27日 12:24(Asia/Shanghai)

报告时间:1min

所在会场:[P] Poster [P1] Poster 1

摘要
A high-voltage 6.5kV/100A 4H-SiC PiN rectifier with multiple-ring modulated junction termination extension (MRM-JTE) is designed, fabricated and characterized in this paper. The MRM-JTE expands the JTE implantation dose window and increases the breakdown voltage in comparison with the traditional two-zone JTE (TZ-JTE) without an additional process steps and the number of masks. The design and optimization for the proposed devices are performed using two-dimensional numerical simulation tool TCAD Silvaco. A measured breakdown voltage of SiC PiN is up to 7.4kV corresponding to 91% of the ideal parallel plane junction. The forward voltage drop for the fabricated device with the active area of chip of 4.6×4.6mm2 is 3.8V at 100A forward current, and the differential specific on-resistance (RON,SP) is 2.5Ωm·cm2 at 100A/cm2 forward current density. In addition, the dynamic reverse recovery time is 166ns and softness factor is 1.23 at room temperature. The wide implantation dose window and high terminal efficiency show that the fabricated 4H-SiC PiN rectifier has an improve effect on the junction curvature effect, which is of great significance for the further fabrication of high-voltage and high-power SiC modules.
关键词
SiC PiN rectifier,MRM-JTE,high voltage,specific on-resistance,reverse recovery
报告人
Mengling Tao
University of Electronic Science and Technology of China

稿件作者
Mengling Tao University of Electronic Science and Technology of China
Xiaochuan Deng University of Electronic Science and Technology of China
Rui Hu University of Electronic Science and Technology of China
Xuan Li University of Electronic Science and Technology of China
Zhiqiang Li China Academy of Engineering Physics
Hongling Lu China Aerospace Science and Technology Corporation
Yi Wen University of Electronic Science and Technology of China
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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