Modeling and Suppression of Crosstalk of SiC MOSFET in Bidirectional Buck/Boost Converter
编号:67 访问权限:公开 更新:2021-08-18 08:48:34 浏览:160次 张贴报告

报告开始:2021年08月27日 12:02(Asia/Shanghai)

报告时间:1min

所在会场:[P] Poster [P1] Poster 1

摘要
Due to the influence of parasitic parameters, there will be crosstalk when SiC MOSFET is used in bidirectional Buck/Boost converter, which affects the safe and reliable operation of the converter. Aiming at the crosstalk voltage of bidirectional Buck/Boost converter in operation, a simulation model with parasitic parameters is established under LTspice, and then the corresponding experimental test device is built to verify the correctness of the model. Finally, the influence of parasitic inductance parameters on crosstalk voltage is explored in LTspice model, and how to optimize the device and wiring layout to suppress crosstalk in bidirectional Buck/Boost converter is analyzed.
关键词
SiC MOSFET, parasitic parameters, crosstalk suppression, Buck/Boost
报告人
Hao Zhang
TAIYUAN UNIVERSITY OF TECHNOLOGY

稿件作者
Hao Zhang TAIYUAN UNIVERSITY OF TECHNOLOGY
Runquan Meng TAIYUAN UNIVERSITY OF TECHNOLOGY
Dingbang Zhang TAIYUAN UNIVERSITY OF TECHNOLOGY
Yingying Ding TAIYUAN UNIVERSITY OF TECHNOLOGY
Ziniu Wu TAIYUAN UNIVERSITY OF TECHNOLOGY
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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