GaN HEMT with current-driven gate and its driving circuit design
编号:58 访问权限:公开 更新:2021-08-16 10:10:21 浏览:166次 张贴报告

报告开始:2021年08月27日 12:10(Asia/Shanghai)

报告时间:1min

所在会场:[P] Poster [P1] Poster 1

摘要
there are two gate configurations, i.e. voltage-driven and current-driven, of GaN HEMT in power electronics industry. The characteristics of the two configurations are discussed in the paper, current-driven configuration is more robust and reliable compared to its counterpart based on the analysis. The gate current requirements of the current-driven GaN transistor are depicted and simple but reliable gate driving circuits are recommended in the paper. Since the fast turn on/off speed of GaN transistors and unsymmetrical PCB layouts the oscillations between GaN transistors in parallel are unavoidable, the design of gate driving circuit when GaN transistors working in parallel is critical for the reliability of the whole system, the paper provides the guidelines and solutions for gate driving circuits of GaN transistors working in parallel.
关键词
GaN HEMT,current-driven,gate,driver
报告人
Qingliang Song
principal engineer Infineon Technologies

稿件作者
清亮 宋 Infineon Technologies
Rafael Garcia Infineon Technology
发表评论
验证码 看不清楚,更换一张
全部评论
重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
联系方式
扫码在手机浏览×
H5
微信小程序码
微信小程序