High Breakdown Voltage AlGaNGaN HEMT with Graded Fluorine Ion Implantation Terminal in Thick Passivation Layer
Abstract—A novel high electron mobility transistor (HEMT) with graded fluoride ion (F-) implantation is presented. It features a graded F- implantation into a thick passivation layer as terminal GaN HEMT (GFT HEMT). The shape of the GFT is an isosceles trapezoid in the xz plane, and the injection area decreasing from the gate to drain. Firstly, the gradual reducing F- implantation area from the gate to drain is more conducive to form a uniform E-field distribution and increase BV; secondly, a gradual F- distribution is achieved by controlling the F- implantation area through a mask and once implantation process, simplifying the process; finally, F- implantation in the thick passivation layer can greatly reduce the damage to 2DEG. The BV and Id of the GFP HEMT are 955V and 494mA/mm, respectively.
AlGaN/GaN HEMT,High Breakdown Voltage,Fluorine Ion Implantation,Graded