High Breakdown Voltage AlGaNGaN HEMT with Graded Fluorine Ion Implantation Terminal in Thick Passivation Layer
编号:20 访问权限:公开 更新:2021-08-20 18:53:00 浏览:205次 张贴报告

报告开始:2021年08月27日 12:00(Asia/Shanghai)

报告时间:5min

所在会场:[P] Poster [P1] Poster 1

摘要
Abstract—A novel high electron mobility transistor (HEMT) with graded fluoride ion (F-) implantation is presented. It features a graded F- implantation into a thick passivation layer as terminal GaN HEMT (GFT HEMT). The shape of the GFT is an isosceles trapezoid in the xz plane, and the injection area decreasing from the gate to drain. Firstly, the gradual reducing F- implantation area from the gate to drain is more conducive to form a uniform E-field distribution and increase BV; secondly, a gradual F- distribution is achieved by controlling the F- implantation area through a mask and once implantation process, simplifying the process; finally, F- implantation in the thick passivation layer can greatly reduce the damage to 2DEG. The BV and Id of the GFP HEMT are 955V and 494mA/mm, respectively.
关键词
AlGaN/GaN HEMT,High Breakdown Voltage,Fluorine Ion Implantation,Graded
报告人
Siyu Deng
University of Electronic Science and Technology of China

稿件作者
Siyu Deng University of Electronic Science and Technology of China
Xiaorong Luo University of Electronic Science and Technology of China
Jie Wei University of Electronic Science and Technology of China
Yanjiang Jia University of Electronic Science and Technology of China
Tao Sun University of Electronic Science and Technology of China
Lufan Xi University of Electronic Science and Technology of China
Zhuolin Jiang University of Electronic Science and Technology of China
Kemeng Yang University of Electronic Science and Technology of China
Qinfeng Jiang University of Electronic Science and Technology of China
Bo Zhang University of Electronic Science Technology of China
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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