The Influence of Gate Resistances on the Turn-on Behaviors of Si/SiC Hybrid Switch
编号:7 访问权限:公开 更新:2021-08-05 19:12:06 浏览:199次 张贴报告

报告开始:2021年08月27日 13:00(Asia/Shanghai)

报告时间:1min

所在会场:[P] Poster [P1] Poster 1

摘要
The SiC/Si hybrid switch composed of high current IGBT and low current MOSFET can provide higher cost performance. However, the dynamic current overshoot exceeding the safe operating area of SiC MOSFET is the major barrier toward reliable operation of the hybrid switch. In addition, it remains an unsolved issue that how to design gate resistances for a Si/SiC hybrid switch. This paper investigates the influence of gate resistances on the turn-on behavior of Si/SiC hybrid switch in a double pulse test. Proper gate resistances are extracted and implemented to reach the tradeoff between switching loss and device reliability without resorting to active regulation.
关键词
Si/SiC hybrid switch,gate resistances,safe operating area,current overshoot,turn-on behavior
报告人
Xiaofeng Jiang
Chongqing university

稿件作者
Xiaofeng Jiang Chongqing university
Huaping Jiang Congqing University
Hongyu Yu Chongqing university
Jinhong Jiang Chongqing university
Hua Mao Chongqing university
Lei Tang Chongqing Ununiversity
Xiaohan Zhong Chongqing university
Hao Feng Chongqing university
LI RAN Chongqing university
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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