Research on threshold voltage hysteresis of D-mode and fully recessed E-mode AlGaN/GaN MIS-HEMTs with HfO2 dielectric
编号:25 访问权限:公开 更新:2021-07-22 08:25:10 浏览:228次 张贴报告

报告开始:2021年08月27日 12:42(Asia/Shanghai)

报告时间:1min

所在会场:[P] Poster [P1] Poster 1

摘要
Depletion-mode (D-mode) and fully recessed enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with HfO2 dielectric grown by atomic layer deposition (ALD) were fabricated on Si substrates. The threshold voltage hysteresis of D-mode MIS-HEMTs were reduced from 1.11V to 0.42V after post-gate annealing (PGA) at 400℃ in ambient for 5 minutes, which is due to the decrease of the interface-state density (from 8.96*1012-1.2*1014eV-1·cm-2 to 2.6*1012-7.6*1013eV-1·cm-2). By contrasting the threshold voltage hysteresis of D-mode MIS-HEMTs and E-mode MIS-HEMTs after PGA, it is found that the AlGaN/AlN barrier of the D-mode MIS-HEMTs can limited electron flux to the interface, leads to the threshold voltage hysteresis of D-mode MIS-HEMTs is smaller than that of the E-mode MIS-HEMTs.

 
关键词
AlGaN/GaN,high electron mobility transistor (HEMT),atomic layer deposition (ALD),HfO2,interface-state density
报告人
Zicheng Yu
Shanghai University

稿件作者
Zicheng Yu Shanghai University
Chi Sun Suzhou Institute of nano-tech and nano-bionics, Chinese Academy of Sciences
Xiaoyu Ding Suzhou Institute of nano-tech and nano-bionics, Chinese Academy of Sciences
Xing Wei Suzhou Institute of nano-tech and nano-bionics, Chinese Academy of Sciences
Weining Liu Suzhou Institute of nano-tech and nano-bionics, Chinese Academy of Sciences
Li Zhang Suzhou Institute of nano-tech and nano-bionics, Chinese Academy of Sciences
Zhang Chen Shanghai University
Guohao Yu Suzhou Institute of nano-tech and nano-bionics, Chinese Academy of Sciences
Baoshun Zhang Suzhou Institute of nano-tech and nano-bionics, Chinese Academy of Sciences
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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