Design and Research on Package Insulation of Highvoltage Silicon Carbide Module
In order to give full play to the performance advantages of silicon carbide (SiC) modules under high temperature and high pressure, it is necessary to carry out targeted design from the perspectives of module structure design, high temperature resistance and material insulation based on SiC characteristics. This paper relies on the 6.5 kV SiC single-chip module package scheme to carry out high voltage SiC module package design and material insulation research. First of all, a variety of package insulation materials were explored, and the significant correlation between high temperature leakage current and long-term withstand voltage of devices was analyzed. After optimizing the internal insulation, the internal insulation of the device has obviously been improved by comparing different design structures. The reverse leakage current of the device is reduced from 380μA to 4μA at 150 ℃ and the working peak reverse voltage of 6.5 kV. The pass rate of 800h 6kV high-temperature reverse-bias test reaches 100%, of which the reliability is also significantly improved. Furthermore, it is believed that charge behaviors such as partial discharge and flashover discharge are the main factors leading to the failure of module high-temperature insulation materials.
highvoltage Silicon Carbide Module,Package Insulation,Insulation failure mechanism