Design and Research on Package Insulation of Highvoltage Silicon Carbide Module
编号:28 访问权限:公开 更新:2021-08-20 22:30:15 浏览:179次 张贴报告

报告开始:2021年08月27日 12:39(Asia/Shanghai)

报告时间:1min

所在会场:[P] Poster [P1] Poster 1

摘要
In order to give full play to the performance advantages of silicon carbide (SiC) modules under high temperature and high pressure, it is necessary to carry out targeted design from the perspectives of module structure design, high temperature resistance and material insulation based on SiC characteristics. This paper relies on the 6.5 kV SiC single-chip module package scheme to carry out high voltage SiC module package design and material insulation research. First of all, a variety of package insulation materials were explored, and the significant correlation between high temperature leakage current and long-term withstand voltage of devices was analyzed. After optimizing the internal insulation, the internal insulation of the device has obviously been improved by comparing different design structures. The reverse leakage current of the device is reduced from 380μA to 4μA at 150 ℃ and the working peak reverse voltage of 6.5 kV. The pass rate of 800h 6kV high-temperature reverse-bias test reaches 100%, of which the reliability is also significantly improved. Furthermore, it is believed that charge behaviors such as partial discharge and flashover discharge are the main factors leading to the failure of module high-temperature insulation materials.
关键词
highvoltage Silicon Carbide Module,Package Insulation,Insulation failure mechanism
报告人
Yang Zhou
Global Energy Interconnection Research Institute Co.,Ltd

稿件作者
Yang Zhou Global Energy Interconnection Research Institute Co.,Ltd
Ling Sang Global Energy Interconnection Research Institute Co.,Ltd
Xinling Tang Global Energy Interconnection Research Institute Co.,Ltd
Hao Shi Global Energy Interconnection Research Institute Co.,Ltd
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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