Modeling and comparison of switching loss between SiC MOSFETs with current source and voltage source gate driver
编号:69 访问权限:公开 更新:2021-08-17 18:31:44 浏览:203次 张贴报告

报告开始:2021年08月27日 12:00(Asia/Shanghai)

报告时间:1min

所在会场:[P] Poster [P1] Poster 1

摘要
         The gate driver is the guarantee for the high efficiency of SiC MOSFET converter. Previous research showed that the switching loss of SiC MOSFET with current source driver (CSD) is lower than that with voltage source driver (VSD). But when the charging current of CSD is small or the Miller platform voltage is low, the switching loss of SiC MOSFET with CSD is higher than that with VSD. Therefore, this paper constructs an evaluation index K, which is the ratio of the current injected into the gate of SiC MOSFET during the Miller platform stage between VSD and CSD, to compare the switching loss between SiC MOSFETs with CSD and VSD under different conditions. When the load is determined, K depends on the selection of the charging current of CSD and the gate resistance of VSD. The mathematical model is verified by 600V/40A double pulse test (DPT) simulation and experiment. In actual situations, when VSD drive resistance is determined, the model can be used to calculate the critical CSD charging current value that makes the switching loss of SiC MOSFET with CSD lower than that with VSD.
关键词
Gate Driver,SiC MOSFET,switching loss,modeling
报告人
Quan Zheng
Huazhong University of Science and Technology;School of Electrical and Electronic Engineering

稿件作者
Quan Zheng Huazhong University of Science and Technology;School of Electrical and Electronic Engineering
Cai Chen Huazhong University of Science and Technology;State Key Laboratory of Advanced Electromagnetic Engineering and Technology
Yong Kang Huazhong University of Science and Technology;School of Electrical and Electronic Engineering
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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