The influence of hydrogen annealing on minority carrier lifetimes in 4H-SiC
编号:35 访问权限:公开 更新:2021-08-18 17:29:15 浏览:220次 张贴报告

报告开始:2021年08月27日 12:32(Asia/Shanghai)

报告时间:1min

所在会场:[P] Poster [P1] Poster 1

摘要
Silicon carbide (SiC) has received increasing attention as a significant semiconductor material for ultrahigh-voltage and low-loss power devices owing to its superior physical properties.The bipolar devices require a long carrier lifetime to achieve sufficient conductivity modulation in the forward conduction mode. In this study, treatments of 1300 ℃ thermal oxidation and hydrogen annealing were applied on 4H-SiC epitaxial wafer to modulate the minority carrier lifetime, which was investigated by microwave photoconductive decay (μ-PCD).
关键词
4H-SiC,,minority carrier lifetimes,power devices
报告人
Ruijun Zhang
XiaMen University;Department of Physics

稿件作者
Ruijun Zhang XiaMen University;Department of Physics
Rongdun Hong XiaMen University;Department of Physics
Jiafa Cai XiaMen University;Department of Physics
Xiaping Chen XiaMen University;Department of Physics
Dingqu Lin XiaMen University;Department of Physics
Shaoxiong Wu XiaMen University;Department of Physics
Mingkun Zhang XiaMen University;Department of Physics
Yuning Zhang XiaMen University;Department of Physics
Jingrui Han Dongguan Tianyu Semiconductor Technology Co., Ltd
Zhengyun Wu XiaMen University;Department of Physics
Feng Zhang Department of Physics; Xiamen University
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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