A Survey on Modeling of SiC IGBT
更新：2021-07-21 20:02:16 浏览：229次
Nowadays, SiC-based semiconductor has become a research hotpot due to its superior material characteristics, such as wide bandgap and high thermal conductivity. Especially, SiC IGBT is considered to be the most promising device in ultrahigh-voltage electrical power switches in the future, due to its excellent flow capacity and low on-state resistance. Several SiC models have been proposed to study the behavior of the devices in the past 10 years, which used different methods and focused on different aspects. Researchers have dedicated efforts to find models which can accurately characterise the electrical and terminal behaviors of SiC IGBT, in order to push the path forward for circuit design and packaging structure optimization. In this paper, the existing models of SiC IGBTs are concluded chronologically by its core method of modeling, foremost contribution, limitation and application value. In the end, some trends for future research are put forward.