A Survey on Modeling of SiC IGBT
编号:41 访问权限:公开 更新:2021-07-21 20:02:16 浏览:229次 张贴报告

报告开始:2021年08月27日 12:27(Asia/Shanghai)

报告时间:1min

所在会场:[P] Poster [P1] Poster 1

摘要
Nowadays, SiC-based semiconductor has become a research hotpot due to its superior material characteristics, such as wide bandgap and high thermal conductivity. Especially, SiC IGBT is considered to be the most promising device in ultrahigh-voltage electrical power switches in the future, due to its excellent flow capacity and low on-state resistance. Several SiC models have been proposed to study the behavior of the devices in the past 10 years, which used different methods and focused on different aspects. Researchers have dedicated efforts to find models which can accurately characterise the electrical and terminal behaviors of SiC IGBT, in order to push the path forward for circuit design and packaging structure optimization. In this paper, the existing models of SiC IGBTs are concluded chronologically by its core method of modeling, foremost contribution, limitation and application value. In the end, some trends for future research are put forward.
 
关键词
SiC IGBT,modeling
报告人
Yuwei Wu
Xi’an Jiaotong University

稿件作者
Yuwei Wu Xi’an Jiaotong University
Laili Wang Xi'an Jiaotong University
Jianpeng Wang Xi’an Jiaotong University
Feng Zhang Department of Physics; Xiamen University
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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