An Improved Desaturation Protection Method with Self-Adaptive Blanking-Time for Silicon Carbide (SiC) Power MOSFETs
编号:4 访问权限:公开 更新:2021-08-05 19:11:04 浏览:168次 张贴报告

报告开始:2021年08月27日 13:03(Asia/Shanghai)

报告时间:1min

所在会场:[P] Poster [P1] Poster 1

摘要
This paper presents a new desaturation protection method for silicon carbide (SiC) power MOSFETs. The proposed method provides an extra charging loop for the fault detection part of desaturation protection circuit by utilizing the difference of drain-source voltage between fault and normal condition. It can effectively reduce the overall response time and the acceleration is partly self-adaptive according to the operating voltage, without compromising its noise immunity. Thus, it achieves a fast and stable protection for SiC devices. The proposed circuit has been simulated and the results verify its performance initially by comparing with conventional desaturation protection circuit. Meanwhile, the relevant theoretical analysis is presented to guide circuit design.
关键词
desaturation protection, SiC MOSFET, self-adaptive blanking time
报告人
Jiawei Li
Huazhong University of Science and Technology

稿件作者
Jiawei Li Huazhong University of Science and Technology
Zhiqiang Wang 华中科技大学
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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