An Integrated GaN-Based Power Module Based on the Cooling-System-Inductor Structure
编号:42 访问权限:公开 更新:2021-07-21 20:02:16 浏览:155次 张贴报告

报告开始:2021年08月27日 12:26(Asia/Shanghai)

报告时间:1min

所在会场:[P] Poster [P1] Poster 1

摘要
The emerging gallium nitride-based (GaN) semiconductor device due to lower switching loss and smaller package size enables multi-phase point-of-load (POL) converters toward higher power density and efficiency in data centers. This paper presents an integrated GaN-based power module with high power density and high efficiency, which is based on active integration and passive integration techniques. The integrated GaN-based power module not only can achieve lower parasitic parameters, but also can achieve efficient cooling capability employing a multifunctional integrated magnetic component. The component plays an important roles of both the integrating four filter inductors and heat sink of the integrated power module. A 150 W, 12-1.8 V, simulation and experimental prototype of the integrated power module is designed. The simulation results demonstrate that the integrated power module has lower parasitic parameters, and good themal performance.
 
关键词
inductor,GaN
报告人
Longyang Yu
Xi'an Jiaotong University

稿件作者
Longyang Yu Xi'an Jiaotong University
Wei Mu Xi'an Jiaotong University
Huaqing Li Xi'an Jiaotong University
Yang ChengZi Xi’an Jiaotong University
Chenya Wang Xi'an Jiaotong University
Laili Wang Xi'an Jiaotong University
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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