Power Loss Characterictics comparsion of the Modular Multilevel Multilevel Converter Based on Based on Si IGBT and SiC MOSFET
编号:10 访问权限:公开 更新:2021-07-21 20:00:44 浏览:179次 张贴报告

报告开始:2021年08月27日 12:57(Asia/Shanghai)

报告时间:1min

所在会场:[P] Poster [P1] Poster 1

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摘要
Currently, Modular multilevel converter (MMC) has the advantages of high modularity, strong fault tolerance, low harmonic content on AC side and so on. Si IGBT is widely used as a switching device in traditional MMC, and its power loss is high in high frequency condition, which will increase the heat dissipation cost and volume of the system. SiC MOSFET is a new wide bandgap device with low switching loss and high temperature tolerance. Its application in MMC has the potential to provide significant efficiency improvement compared with silicon devices. However, the possibility and impact of using SiC-based devices instead of Si devices for high-power conversion have not been thoroughly explored.
 This paper compares power loss characteristics of SiC-based MMC and Si-based MMC, and the result shows that the use of SiC-based devices in MMCs does not guarantee lower losses for all operating conditions.
 
关键词
MMC,Power Loss Characteristics,SiC MOSFET
报告人
Tianxiang Yin
Huazhong University of Science and Technology

稿件作者
Tianxiang Yin Huazhong University of Science and Technology
Lei Lin Huazhong University of Science and Technology
Yihong Huang Huazhong University of Science and Technology
Zuochen Liu Huazhong University of Science and Technology
Jin Kaiyuan Huazhong University of Science and Technology
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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