Off-State Negative Differential Capacitance in Low-Temperature AlGaN/GaN Heterostructures
编号:57 访问权限:公开 更新:2021-08-18 20:50:28 浏览:147次 张贴报告

报告开始:2021年08月27日 12:11(Asia/Shanghai)

报告时间:1min

所在会场:[P] Poster [P1] Poster 1

摘要
The degradation phenomenon and mechanism of AlGaN / GaN heterojunction field-effect transistors (HFETs) working at cryogenic temperature have been rarely reported. In this paper, the off-state capacitance of AlGaN / GaN HFETs at low temperature and the room temperature was investigated. The negative differential capacitance at 77 K and 300 K are 11.26 F and 0.69 F, respectively. The capacitance was tested at different temperatures, which showed that the negative differential capacitance came from low-temperature conditions. At room temperature, the resistance was increased sharply under the gate of the device off-state. At this time, the current leakage channel was turned on, the phenomenon of negative differential capacitance was caused by an accumulation of electrons. Through the C-V test at different frequencies at low temperature, it reflects the relationship between the trap level, the off-state leakage current, and the negative differential capacitance. This investigation would provide a reference for the application and reliability analysis of RF GaN devices in a low-temperature environment.
关键词
HFET,low-temperature,negative differential capacitance
报告人
Siyu Liu
Doctor Xidian University

稿件作者
Siyu Liu Xidian University
Jiejie Zhu Xidian University
Jingshu Guo Xidian University
Jielong Liu Xidian University
MIN HAN MI Xidian University
Yilin Chen Xidian University
Xiaohua Ma Xidian University
Yue Hao Xidian University
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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