Degradation behavior and mechanism of SiC power MOSFETs by total ionizing dose irradiation under different gate voltages
编号:63 访问权限:公开 更新:2021-08-20 23:53:54 浏览:142次 张贴报告

报告开始:2021年08月27日 12:05(Asia/Shanghai)

报告时间:1min

所在会场:[P] Poster [P1] Poster 1

摘要
In this work, the degradation behavior of the commercial SiC power MOSFETs was investigated under total ionizing dose (TID) irradiation with different gate voltages . In the experiment, in order to simulate the radiation environment, 60Co was used as the γ ray radiation source , the dose rate was 50 rad/s, and thecumulative total ionizing dose was 1M rad. The experimental results show that when a positive and negative gate voltage is applied to the device, the threshold voltage is obviously negative shift, the output characteristic and capacitance curve also have negative shift phenomenon. Meanwhile, the device with positive gate voltage has more obvious shift than negative bias voltage. Furthermore, the drain-source leakage current of the device with positive gate voltage became larger, it means the blocking characteristics deteriorated after radiation. The negative shift of the gate-capacitance versus gate-voltage curve was analyzed. The physical mechanism could be attributed to the high energy particle radiation excite a large number of electron hole pairs in the oxide layer of MOSFET, the electrons flow out of the metal electrode after radiation, and the holes are captured by the oxide layer to form a new interface trap charge. This paper may be helpful to the application of SiC MOSFETs in aviation, aerospace and other fields.

 
关键词
SiC power MOSFET,Gate voltage,Total dose irradiation
报告人
Kexin Gao
Xiangtan University

稿件作者
Kexin Gao Xiangtan University
YiQiang Chen The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology
Shuaizhi Zheng Xiangtan University
Min Liao Xiangtan University
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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