Short-circuit Protection Circuit of SiC MOSFET Based on Drain-source Voltage Integral
编号:27 访问权限:公开 更新:2021-07-21 20:02:07 浏览:213次 张贴报告

报告开始:2021年08月27日 12:40(Asia/Shanghai)

报告时间:1min

所在会场:[P] Poster [P1] Poster 1

摘要
    The short-circuit withstand time of SiC MOSFET is only 2-7µs, which is much shorter than that of Si IGBT, therefore, the short-circuit detection circuit must respond fast and have high bandwidth. According to the short-circuit characteristic of SiC MOSFET that the short-circuit withstand time decreases with the increase of DC bus voltage, a short-circuit protection circuit based on drain-source voltage integral is proposed in this paper to realize the self-adapting short-circuit protection, namely, the higher the DC bus voltage is, the faster the short-circuit protection action is. Further, the experimental platform is built and the experimental results under different DC bus voltage levels are given to verify the rapidness and effectiveness of the proposed short-circuit protection circuit. Finally, the conclusion is drawn. This paper provides a new choice for short-circuit protection of SiC MOSFETs.
关键词
SiC MOSFET,short-circuit characteristic,short-circuit protection,self-adapting
报告人
Zhidong Qiu
Beijing Jiaotong University

稿件作者
Hong Li Beijing Jiaotong University
Yuting Wang Beijing Jiaotong University
Zhidong Qiu Beijing Jiaotong University
Zuoxing Wang Beijing Jiaotong University
Xiaofei Hu Beijing Jiaotong University
Jia Zhao Infineon Integrated Circuit (Beijing) Co., Ltd.
发表评论
验证码 看不清楚,更换一张
全部评论
重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
联系方式
扫码在手机浏览×
H5
微信小程序码
微信小程序