A Compact 175℃ High Temperature Gate Driver with Isolated Power Supply and Advanced Protection for HybridPACK Drive SiC Power Module
编号:3 访问权限:公开 更新:2021-07-21 19:53:29 浏览:182次 张贴报告

报告开始:2021年08月27日 13:04(Asia/Shanghai)

报告时间:1min

所在会场:[P] Poster [P1] Poster 1

摘要
The operation of silicon carbide (SiC) power semiconductor devices under high ambient temperature requires high temperature gate drivers adjacent to the devices. This paper presents a three-phase isolated gate driver circuit suitable for HybridPACK Drive (HP Drive) modules with operating ambient temperature up to 175℃. First, an overall introduction of the gate driver structure and function is presented. Second, detailed designs are presented in the form of submodules such as desaturation protection circuit, isolated power supply circuit, active Miller clamp (AMC) circuit, undervoltage lockout circuit and so on. Third, the proposed gate driver design is validated through double pulse test, continuous full-load operation with an ambient temperature of 150℃ and light load test under 175℃.
关键词
Gate Driver,high temperature
报告人
Cheng Qian
Huazhong University of Science and Technology

稿件作者
Cheng Qian Huazhong University of Science and Technology
智强 王 华中科技大学
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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