IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WIPDA-ASIA 2021)

2021年08月25日~27日

中国 · Wuhan

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时刻表

时区：Asia/Shanghai

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第3天2021年08月27日星期五

S5&S6	开始	结束	持续	编号	标题
S5&S6	WBG Device Design and Gate Drivers@Oral Session 2 2021年08月27日 08:30~11:30 ZOOM会议进入会议室视频会议口头报告时刻表 V13 发布时间：2021-08-26 10:02:01
WBG Device Design
Chair: Lin Liang, Huazhong University of Science and Technology / Yanqing Wu, Peking University
08:30	08:45	15	103	Comparing Hexagonal and Circular Cell Designs for SiC MPS Diode: The Curvature Effect on Avalanche Capability Li Liu/Zhejiang University 口头报告
08:45	09:00	15	115	Improved Breakdown Characteristics for AlN/GaN/InGaN Coupling Channel HEMTs with SiNx Removal and Backfill Technique Hao Lu/School of Microelectronics, Xidian University 口头报告
09:00	09:15	15	94	Multiple UIS Ruggedness of 1200V Asymmetric Trench SiC MOSFETs Wei Huang/University of Electronic Science and Technology of China 口头报告
09:15	09:30	15	84	A Novel GaN MIS-HEMT with a Source-connected Clamp Electrode for Suppressing Short-channel effect Yijun Shi/The Fifth Institute of Electronics, Ministry of Industry and Information Technology 口头报告
09:30	09:45	15	83	Resonant Gate Driver with Wide Range Adjustment of Driving Speed Qiaozhi Yue Student/Huazhong University of Science and Technology 口头报告
09:45	10:00	15		Coffee break
Device Gate Drivers
Chair: Zicheng Liu, Huazhong University of Science and Technology / Hanyu Wang, Hefei University of Technology
10:00	10:15	15	91	Optimized Parameter Selection Method of Driving Circuit for SiC MOSFET Haihong Qin/Nanjing University of Aeronautics and Astronautics 口头报告
10:15	10:30	15	104	Analysis of Crosstalk and Suppression Methods for Enhancement-Mode GaN HEMTs in A Phase-Leg Topology Haihong Qin/Nanjing University of Aeronautics and Astronautics 口头报告
10:30	10:45	15	70	An Optimized Parameter Design Method for Desaturation Protection Circuit towards Fast Response Speed and Strong Noise Immunity Cheng Qian/Huazhong University of Science and Technology 口头报告
10:45	11:00	15	97	A Review of the Crosstalk Suppression Methods for SiC MOSFETs in the Phase-leg Circuit Configuration Yujie Ding/Fudan University 口头报告
11:00	11:15	15	76	A Synchronous Boot-strapping Technique with Increased On-time and Improved Efficiency for High-side Gate-drive Power Delivery Nathan Miles Ellis Post-doctoral/University of California Berkeley 口头报告

S7&S8	开始	结束	持续	编号	标题
S7&S8	WBG Power Converters & WBG Device Characteristic and Converter Modeling@Oral Session 2 2021年08月27日 14:00~17:00 ZOOM会议进入会议室视频会议口头报告时刻表 V13 发布时间：2021-08-26 10:02:01
WBG Power Converters
Chair: Hongfei Wu, Nanjing University of Aeronautics and Astronautics / Dong Jiang, Huazhong University of Science and Technology
14:00	14:15	15	113	Soft-Switching Resonant Active Clamp Flyback based-on GaN HEMTs for MHz High Step-Up Applications Wuji Meng/Nanjing University of Aeronautics and Astronautics 口头报告
14:15	14:30	15	78	Design of a 10kW, High-Frequency Dual Active Bridge Converter Using SiC Devices Haoyuan Jin/Xi'an Jiaotong University 口头报告
14:30	14:45	15	106	A Single-Stage Modular DCX with High Voltage Conversion Ratio Based on High Frequency LLC Resonant Converter Wen Zhaoliang student/Harbin Institute of Technology 口头报告
14:45	15:00	15	65	Comparison of Two Types of Single Gate Drivers for SiC MOSFET Stacks in Flyback Converters Rui Wang Doctor/Aalborg University 口头报告
15:00	15:15	15	79	Review of soft-switching high-frequency GaN-based single-phase Bridgeless Rectifier Yunfeng Liu/Department of Electrical Engineering, Technical University of Denmark 口头报告
15:15	15:30	15	92	Chao Liu/Technical University of Denmark 口头报告
15:30	15:45	15		Coffee break
WBG Device Characteristic and Converter Modeling
Chair: Zhang Yu, Huazhong University of Science and Technology / Han Peng, Huazhong University of Science and Technology
15:45	16:00	15	74	Modeling and Design of A 10MHz Class Φ2 Inverter Yongzhi Liu/Huazhong University of Science and Technology,School of Electrical and Electronic Engineering 口头报告
16:00	16:15	15	101	A Real-Time Self-Learning High Performance Control for Megahertz GaN-based DC-DC Converter Jing Chen/Huazhong University of Science and Technology,the State Key Laboratory of Advanced Electromagnetic Engineering and Technology 口头报告
16:15	16:30	15	105	Comparison Study on Short Circuit Capability of 1.2 kV Split-Gate MOSFET and Split-Source MOSFET with Integrated JBS Diode Hongyi Xu/Zhejiang University 口头报告
16:30	16:45	15	95	Single Pulse Short-Circuit Failure Mechanism of 1200V Asymmetric Trench SiC MOSFETs Zhaoxiang Wei/Southeast University, Nanjing, China 口头报告
16:45	17:00	15	75	The Influence of Dynamic Threshold Voltage Drift on Third Quadrant Characteristics of SiC MOSFET Lei Tang/Chongqing university 口头报告

重要日期

会议日期

08月25日

2021

至

08月27日

2021
04月21日 2021

摘要截稿日期
05月15日 2021

摘要录用通知日期
06月25日 2021

终稿截稿日期
08月24日 2021

报告提交截止日期
08月27日 2021

注册截止日期

主办单位

IEEE
IEEE ELECTRONIC DEVICE SOCIETY

承办单位

Huazhong University of Science and Technology

联系方式

Dr. 刘老师
li******@vip.163.com

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历届会议

2023年08月27日台湾-中国 Hsinchu
2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
2018年05月17日中国 xian
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

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