Comparison Study on Short Circuit Capability of 1.2 kV Split-Gate MOSFET and Split-Source MOSFET with Integrated JBS Diode
编号:105访问权限:仅限参会人更新:2021-07-21 20:06:13浏览:285次口头报告
报告开始:2021年08月27日 16:15(Asia/Shanghai)
报告时间:15min
所在会场:[Room2] Oral Session 2 [S7&S8] WBG Power Converters & WBG Device Characteristic and Converter Modeling
暂无文件
提示
无权点播视频
提示
没有权限查看文件
提示
文件转码中
摘要
In this work, the JBS integrated MOSFETs with two kinds of integration, i.e., JBS cell integrated in source region (named Split-Source MOSFET) and JBS cell integrated in gate region (named Split-Gate MOSFET) are investigated and the most important reliability aspect, i.e., short circuit robustness is compared via experiment and simulation. The device failure mechanisms are studied and the method of improving short circuit ruggedness of the JBS integrated MOSFET is proposed.
发表评论