Comparison Study on Short Circuit Capability of 1.2 kV Split-Gate MOSFET and Split-Source MOSFET with Integrated JBS Diode
编号:105 访问权限:仅限参会人 更新:2021-07-21 20:06:13 浏览:285次 口头报告

报告开始:2021年08月27日 16:15(Asia/Shanghai)

报告时间:15min

所在会场:[Room2] Oral Session 2 [S7&S8] WBG Power Converters & WBG Device Characteristic and Converter Modeling

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摘要
In this work, the JBS integrated MOSFETs with two kinds of integration, i.e., JBS cell integrated in source region (named Split-Source MOSFET) and JBS cell integrated in gate region (named Split-Gate MOSFET) are investigated and the most important reliability aspect, i.e., short circuit robustness is compared via experiment and simulation. The device failure mechanisms are studied and the method of improving short circuit ruggedness of the JBS integrated MOSFET is proposed.
 
关键词
SiC MOSFET,Integrated JBS,Short circuit
报告人
Hongyi Xu
Zhejiang University

稿件作者
Hongyi Xu Zhejiang University
Chaobiao Lin Zhejiang University
Na Ren Zhejiang University
Xinhui Gan China Resources Microelectronics Limited
Liping Liu China Resources Microelectronics Limited;
Zhengyun Zhu Zhejiang University
Li Liu Zhejiang University
Qing Guo Zhejiang University
Jianxin Ji China Resources Microelectronics Limited
Kuang Sheng Zhejiang University
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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