Improved Breakdown Characteristics for AlN/GaN/InGaN Coupling Channel HEMTs with SiNx Removal and Backfill Technique
编号:115 访问权限:仅限参会人 更新:2021-07-21 20:06:19 浏览:195次 口头报告

报告开始:2021年08月27日 08:45(Asia/Shanghai)

报告时间:15min

所在会场:[Room2] Oral Session 2 [S5&S6] WBG Device Design and Gate Drivers

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摘要
In this work, we report high breakdown characteristics of AlN/GaN/InGaN coupling channel HEMTs (CC-HEMTs) using by silicon nitride (SiNx) passivation layer removal and backfill technique (PRB). Owing to the modulated barrier stress and blocked interface leakage path, the fabricated HEMTs exhibit excellent electrical characteristics, including a high breakdown voltage of 340 V. The small-signal measurements revealed that the current gain cutoff frequency (fT) and maximum oscillation frequency (fmax) are 12.3 and 35.9 GHz, respectively. A high Johnson’s figure of merit (JFoM) of 4.2 THz•V is achieved, benchmark against state-of-the-art (SOA) report of existing GaN HEMTs platform. These results have proved that the great potential of AlN/GaN/InGaN CC-HEMTs with reasonable device design applied for the next generation radio frequency front-end modules (FEMs) and power conversion integrated circuits.    
关键词
AlN barrier,high breakdown field,coupling channel,Gallium nitride,HEMT
报告人
Hao Lu
School of Microelectronics; Xidian University

稿件作者
Hao Lu School of Microelectronics; Xidian University
Xiaohua Ma Xidian University
Bin Hou Xidian University
Ling Yang Xidian University
Yue Hao Xidian University
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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