Improved Breakdown Characteristics for AlN/GaN/InGaN Coupling Channel HEMTs with SiNx Removal and Backfill Technique
更新：2021-07-21 20:06:19 浏览：195次
In this work, we report high breakdown characteristics of AlN/GaN/InGaN coupling channel HEMTs (CC-HEMTs) using by silicon nitride (SiNx) passivation layer removal and backfill technique (PRB). Owing to the modulated barrier stress and blocked interface leakage path, the fabricated HEMTs exhibit excellent electrical characteristics, including a high breakdown voltage of 340 V. The small-signal measurements revealed that the current gain cutoff frequency (fT) and maximum oscillation frequency (fmax) are 12.3 and 35.9 GHz, respectively. A high Johnson’s figure of merit (JFoM) of 4.2 THz•V is achieved, benchmark against state-of-the-art (SOA) report of existing GaN HEMTs platform. These results have proved that the great potential of AlN/GaN/InGaN CC-HEMTs with reasonable device design applied for the next generation radio frequency front-end modules (FEMs) and power conversion integrated circuits.
AlN barrier,high breakdown field,coupling channel,Gallium nitride,HEMT