Comparing Hexagonal and Circular Cell Designs for SiC MPS Diode: The Curvature Effect on Avalanche Capability
编号:103 访问权限:仅限参会人 更新:2021-07-21 20:06:12 浏览:231次 口头报告

报告开始:2021年08月27日 08:30(Asia/Shanghai)

报告时间:15min

所在会场:[Room2] Oral Session 2 [S5&S6] WBG Device Design and Gate Drivers

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摘要
In this work, the SiC MPS diodes with hexagonal and circular cell designs are studied and compared regarding the static performance and avalanche capability via experiment and 3D TCAD simulation. The experimental results exhibit that the breakdown voltage of the MPS-B diode (circular cell) is slightly higher than that of the MPS-A diode (hexagonal cell). The Unclamped-Inductive-Switching (UIS) tests are also performed for the two devices, and the MPS-B diode has a better avalanche capability both in terms of avalanche energy/ current capabilities. Simultaneously, the MPS-A diode shows a higher increase rate and higher maximum voltage (Vd_max) during the avalanche pulse, meaning a higher junction temperature rise (ΔTj) and a reduced avalanche capability. The simulation results reveal the electric field of the corners of hexagonal P+ islands is higher than that of the edges of circular P+ islands due to the curvature effect, which leading to a more serious heat crowding and a premature failure. This phenomenon illustrates a smoother design (such as the circular cell design) should be used to replace the corner area and to alleviate the electric field crowding issue, which helps to enhance the avalanche robustness of the SiC device.
关键词
SiC,MPS Diode,Curvature Effect,Avalanche Capability,Cell Design
报告人
Li Liu
Zhejiang University

稿件作者
Li Liu Zhejiang University
Na Ren Zhejiang University
Jiupeng Wu Zhejiang University
Zhengyun Zhu Zhejiang University
Hongyi Xu Zhejiang University
Qing Guo 浙江大学
Kuang Sheng Zhejiang University
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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