Resonant Gate Driver with Wide Range Adjustment of Driving Speed
编号:83 访问权限:仅限参会人 更新:2021-07-21 20:05:59 浏览:198次 口头报告

报告开始:2021年08月27日 09:30(Asia/Shanghai)

报告时间:15min

所在会场:[Room2] Oral Session 2 [S5&S6] WBG Device Design and Gate Drivers

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摘要
Resonant gate driver (RGD) is the more advanced solution to drive SiC MOSFETs in high frequency applications with driver loss reduction and power density improvement. The driving speed of RGD is mainly determined by the resonance mode and resonant inductor, the options of which are relatively limited and make the smooth adjustment of driving speed not quite easy. In this paper, a new driving speed adjustment approach is proposed by changing the average driving current in driving transition. The acceleration of driving speed is achieved through inductor current pre-charging and the reduction of driving speed is realized through multi-pulse resonant driving. A full-bridge 1/4 period RGD prototype is built for verification. The baseline of driving time is 250 ns when initial inductor current is zero, and the measured driving times using the proposed method vary from 80 ns to 510 ns.  Different driving speeds for turn-on and turn-off transients are also realized.
关键词
Resonant gate driver,driving speed adjustment,inductor current pre-charging,multi-pulse resonant driving,SiC MOSFET
报告人
Qiaozhi Yue
Student Huazhong University of Science and Technology

稿件作者
Hao Peng Huazhong University of Science and Technology
Han Peng Huazhong University of Science and Technology
Qiaozhi Yue Huazhong University of Science and Technology
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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