Multiple UIS Ruggedness of 1200V Asymmetric Trench SiC MOSFETs
编号:94 访问权限:仅限参会人 更新:2021-08-18 20:38:44 浏览:192次 口头报告

报告开始:2021年08月27日 09:00(Asia/Shanghai)

报告时间:15min

所在会场:[Room2] Oral Session 2 [S5&S6] WBG Device Design and Gate Drivers

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摘要
In this paper, 1200 V asymmetric trench silicon carbide (SiC) metal–oxide–semiconductorfield-effect transistors (MOSFETs) are investigated by experiment under multiple unclamped inductive switching (UIS) events. The degradation degree of electrical characteristics and failure modes are evaluated under various avalanche energy ratio. Meanwhile, Focus Ion Beam (FIB) cut illustrates the cross-section of damage point. For low energy ratio condition, the increasing of Ron demonstrates that thermal fatigue is main root of failure. However, burn out of field oxide and metal Al is shown under high energy ratio.
关键词
Failure mode,Asymmetric Trench,SiC MOSFET,Multiple UIS
报告人
Wei Huang
University of Electronic Science and Technology of China

稿件作者
Jiayue Liu University of Electronic Science and Technology of China
Xiaochuan Deng University of Electronic Science and Technology of China
Xu Li University of Electronic Science and Technology of China
Wei Huang University of Electronic Science and Technology of China
ZhiQiang Li China Academy of Engineering Physics
Hongling Lu China Aerospace Science and Technology Corporation
Xuan Li University of Electronic Science and Technology of China
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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