报告详情
A Single-Stage Modular DCX with High Voltage Conversion Ratio Based on High Frequency LLC Resonant Converter
编号：106
访问权限：仅限参会人
更新：2021-07-21 20:06:13 浏览：455次
口头报告
报告开始：2021年08月27日 14:30（Asia/Shanghai）
报告时间：15min
所在会场：[Room2] Oral Session 2 [S7&S8] WBG Power Converters & WBG Device Characteristic and Converter Modeling
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摘要
Abstract—Data centers demand high-current, high-efficiency and low-cost power solutions. And the high frequency resonant converter is more attractive in industrial application because of its high power density and high efficiency. This paper presents a modular and linear extendable single-stage DCX with high voltage conversion ratio which based on high frequency LLC resonant converter. The converter using a planar matrix transformer has successfully achieved ZVS in the primary side as well as ZCS in the secondary side. Meanwhile, GaN devices are also applied due to their much lower parasitic capacitance compared to that of high voltage Si MOSFET. A 500 kHz, 400-6 V, 600 W isolated prototype with high conversion ratio has been built and tested as well, which achieved 91.1% peak efficiency.
关键词
Isolated modular converter,High frequency,LLC resonant converter,Planar matrix transformer,GaN devices
报告人
Wen Zhaoliang
student Harbin Institute of Technology稿件作者
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重要日期
-
会议日期
08月25日
2021
至08月27日
2021
-
04月21日 2021
摘要截稿日期
-
05月15日 2021
摘要录用通知日期
-
06月25日 2021
终稿截稿日期
-
08月24日 2021
报告提交截止日期
-
08月27日 2021
注册截止日期
主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
联系方式
- Dr. 刘老师
- li******@vip.163.com
历届会议
-
2023年08月27日 台湾-中国 Hsinchu
2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia -
2018年05月17日 中国 xian
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
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