Design of a 10kW, High-Frequency Dual Active Bridge Converter Using SiC Devices
编号:78 访问权限:仅限参会人 更新:2021-07-21 20:05:56 浏览:185次 口头报告

报告开始:2021年08月27日 14:15(Asia/Shanghai)

报告时间:15min

所在会场:[Room2] Oral Session 2 [S7&S8] WBG Power Converters & WBG Device Characteristic and Converter Modeling

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摘要
Dual active bridge (DAB) converter is widely used as a dc transformer in high power applications. This paper gives a general design method for high-frequency DAB converter using silicon carbide (SiC) MOSFETs, and gives mathematical analysis for designing the inductor and transformer for the DAB converter. The inductance calculation is critical in the designing process, especially in the high-frequency area, considering the dead-time effect and zero-voltage-switching (ZVS) requirement. It can be divided into four steps, including converter power requirement, inductor energy requirement, dead-time effect requirement and rms of the inductor current. A 10kW, 100kHz DAB converter using SiC MOSFETs is built, achieving ZVS turn-on successfully. The efficiency is up to 97.1% at 10kW, and the power density is 4.18W/cm3.
关键词
Dual active bridge; SiC ; inductor; ZVS; deadtime
报告人
Haoyuan Jin
Xi'an Jiaotong University

稿件作者
Haoyuan Jin Xi'an Jiaotong University
Huaqing Li Xi'an Jiaotong University
Junduo Wen Xi'an Jiaotong University
ChengZi Yang Xi'an Jiaotong University
Hang Kong Xi'an Jiaotong University
Laili Wang Xi'an Jiaotong University
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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