A Novel GaN MIS-HEMT with a Source-connected Clamp Electrode for Suppressing Short-channel effect
编号:84 访问权限:仅限参会人 更新:2021-08-11 10:09:10 浏览:221次 口头报告

报告开始:2021年08月27日 09:15(Asia/Shanghai)

报告时间:15min

所在会场:[Room2] Oral Session 2 [S5&S6] WBG Device Design and Gate Drivers

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摘要
In this work, a novel GaN MIS-HEMT with highly suppressed short-channel effect is proposed and investigated. The device features a Source-connected clamp electrode near to the Drain-side Gate edge, which can clamp the voltage at the Drain-side Gate edge to less than 2V, subsequently suppressing the short-channel effect. Compared with the conventional short-channel GaN MIS-HEMT, the off-state leakage current of the proposed GaN MIS-HEMT decreases from 10-1 A/mm to 10-7 A/mm (with Gate voltage of 0V and Drain voltage of 10V), and the electron density under the Gate region is also greatly reduced (from 1018 cm-3 to 1011 cm-3), subsequently increasing the threshold voltage from the negative value to 2V. Moreover, the proposed GaN MIS-HEMT also delivers much lower reverse Gate-to-Drain capacitor due to the electrostatic shielding of the Source-connected clamp electrode. Both increase in the length and depth of the Source-connected Schottky clamp electrode can further reduce the off-state leakage current, the electron density under the Gate region, and the reverse Gate-to-Drain capacitor. The excellent characteristics of the proposed SC GaN MIS-HEMT show that the device is promising for future power applications.
关键词
GaN MIS-HEMT,short-channel effect,Source-connected clamp electrode,reverse Gate-to-Drain capacitor
报告人
Yijun Shi
The Fifth Institute of Electronics, Ministry of Industry and Information Technology

稿件作者
宜军 施 工业和信息化部电子第五研究所
Wu Shan Guangdong Eco-Engineering Polytechnic
Chen Si 工业和信息化部电子第五研究所
志伟 付 工业和信息化部电子第五研究所
宏跃 王 工业和信息化部电子第五研究所
斌 周 工业和信息化部电子第五研究所
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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