The Influence of Dynamic Threshold Voltage Drift on Third Quadrant Characteristics of SiC MOSFET
编号:75访问权限:仅限参会人更新:2021-07-21 20:05:54浏览:253次口头报告
报告开始:2021年08月27日 16:45(Asia/Shanghai)
报告时间:15min
所在会场:[Room2] Oral Session 2 [S7&S8] WBG Power Converters & WBG Device Characteristic and Converter Modeling
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摘要
Abstract—The conduction characteristics of the third quadrant of SiC MOSFET are mainly the current sharing between the MOS channel and the body diode which can be affected by many factors. This paper presents a comprehensive study of the influence of dynamic threshold voltage drift on third quadrant characteristics of SiC MOSFET. By combining the equivalent potential model, TCAD simulation, and experiment, it is revealed that once the threshold drifts by dynamic gate voltage stress, the static and dynamic characteristics of third quadrant of SiC MOSFET will change. Furthermore, the current sharing of parallel devices is also affected by dynamic threshold voltage drift. These results provide an effective guide for the third quadrant application of SiC MOSFET.
关键词
Body diode,SiC MOSFET,Third quadrant characteristics,Dynamic threshold voltage drift
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