Single Pulse Short-Circuit Failure Mechanism of 1200V Asymmetric Trench SiC MOSFETs
编号:95访问权限:仅限参会人更新:2021-07-21 20:06:06浏览:197次口头报告
报告开始:2021年08月27日 16:30(Asia/Shanghai)
报告时间:15min
所在会场:[Room2] Oral Session 2 [S7&S8] WBG Power Converters & WBG Device Characteristic and Converter Modeling
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摘要
This work investigates the single pulse short-circuit failure mechanism of 1200V asymmetric Trench SiC MOSFETs. With the help of the test system, the DUT (IMW120R220M1H) is stressed by SC stress with gradually increased pulse width, until it fails. The electrical properties before and after the failure are compared. Moreover, TACD simulations are performed to evaluate the physical status of the device under SC condition. It demonstrates that the serious stress, mainly the impact ionization rate, appealing at the channel region, leads to the gate-source failure of the device.
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