Single Pulse Short-Circuit Failure Mechanism of 1200V Asymmetric Trench SiC MOSFETs
编号:95 访问权限:仅限参会人 更新:2021-07-21 20:06:06 浏览:197次 口头报告

报告开始:2021年08月27日 16:30(Asia/Shanghai)

报告时间:15min

所在会场:[Room2] Oral Session 2 [S7&S8] WBG Power Converters & WBG Device Characteristic and Converter Modeling

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摘要
This work investigates the single pulse short-circuit failure mechanism of 1200V asymmetric Trench SiC MOSFETs. With the help of the test system, the DUT (IMW120R220M1H) is stressed by SC stress with gradually increased pulse width, until it fails. The electrical properties before and after the failure are compared. Moreover, TACD simulations are performed to evaluate the physical status of the device under SC condition. It demonstrates that the serious stress, mainly the impact ionization rate, appealing at the channel region, leads to the gate-source failure of the device.
关键词
Short-Circuit,Asymmetric Trench,SiC MOSFETs,Failure Mechanism
报告人
Zhaoxiang Wei
Southeast University, Nanjing, China

稿件作者
Zhaoxiang Wei Southeast University, Nanjing, China
Jiaxing Wei Southeast University, Nanjing, China
Xiaowen Yan Southeast University, Nanjing, China
Hua Zhou Southeast University, Nanjing, China
Hao Fu Southeast University, Nanjing, China
Siyang Liu Southeast University, Nanjing, China
Weifeng Sun Southeast University
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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