Optimized Parameter Selection Method of Driving Circuit for SiC MOSFET
编号:91 访问权限:仅限参会人 更新:2021-08-21 16:04:06 浏览:221次 口头报告

报告开始:2021年08月27日 10:00(Asia/Shanghai)

报告时间:15min

所在会场:[Room2] Oral Session 2 [S5&S6] WBG Device Design and Gate Drivers

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摘要
In order to reduce switching time and on resistance of SiC MOSFET, higher voltage and lower RG are often selected in driving circuit, but also these factors affect the gate reliability. Therefore, this paper has proposed a method to select the parameters of driving circuit. Firstly, the driving equivalent circuit has been analyzed and the constraints between parameters has been given. Sencondly, the parameters have been calculated with consideration of gate safety and the influence of parasitic parameters have been analyzed. Finally, by building a experimental platform, the research focused on the optimized parameter selection has been carried out, which can verify the feasibility of the method.
关键词
SiC MOSFET,gate driving circuit,parameter selection
报告人
Haihong Qin
Nanjing University of Aeronautics and Astronautics

稿件作者
Haihong Qin Nanjing University of Aeronautics and Astronautics
Sixuan Xie Nanjing University of Aeronautics and Astronautics
Feifei Bu Nanjing University of Aeronautics and Astronautics
Shishan Wang Nanjing University of Aeronautics and Astronautics
Wenming Chen Nanjing University of Aeronautics and Astronautics
Dafeng Fu Nanjing University of Aeronautics and Astronautics
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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