Comparison of Two Types of Single Gate Drivers for SiC MOSFET Stacks in Flyback Converters
编号:65 访问权限:仅限参会人 更新:2021-07-22 10:08:02 浏览:200次 口头报告

报告开始:2021年08月27日 14:45(Asia/Shanghai)

报告时间:15min

所在会场:[Room2] Oral Session 2 [S7&S8] WBG Power Converters & WBG Device Characteristic and Converter Modeling

视频 无权播放 演示文件

提示:该报告下的文件权限为仅限参会人,您尚未登录,暂时无法查看。

摘要
In some high-voltage low-power applications, silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) stack is required to withstand the high voltage. Instead of using separated gate driver for each device, the single gate driver only requires one standard gate driver to drive all the devices in the stack with the help of some passive components. However, it is vulnerable to the voltage oscillation of power loop due to its working principal. Therefore, in this paper, the single gate driver is analyzed in a flyback converter application since an abrupt voltage dropping would occur when it is operating in discontinuous conduction mode (DCM), and two types of single gate drivers are compared. Besides, in order to obtain better switching performance, suitable design guidelines are provided for both two types. Finally, the experimental results verify the correctness of the analysis.  
关键词
SiC MOSFET stack; single gate driver; flyback converter
报告人
Rui Wang
Doctor Aalborg University

稿件作者
Rui Wang Aalborg University
Hongbo Zhao Aalborg University
Stig Munk-Nielsen Aalborg University
发表评论
验证码 看不清楚,更换一张
全部评论
重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
联系方式
扫码在手机浏览×
H5
微信小程序码
微信小程序