时刻表

时区：Asia/Shanghai

第3天2021年08月27日星期五

S1&S2

WBG Device Modeling, Simulation and Reliability@Oral Session 1

2021年08月27日 08:30~11:30

ZOOM会议 进入会议室

视频会议 口头报告

时刻表 V13 发布时间：2021-09-01 08:33:01

开始 结束 持续 编号 标题
Device Modeling and Simulation
Chair: Yu Chen, Huazhong University of Science and Technology / Xiaochuan Deng, University of Electronic Science and Technology of China
08:30 08:45 15 1
Datasheet Driven Turn Off Overvoltage Prediction for Silicon Carbide Power MOSFETs Based on Theoretical Analysis
Cheng Qian/Huazhong University of Science and Technology
口头报告
08:45 09:00 15 73
An Automated Electro-Thermal-Mechanical Co-Simulation Methodology Based on PSpice-MATLAB-COMSOL for SiC Power Module Design
Yayong Yang student/Huazhong University of Science and Technology
口头报告
09:00 09:15 15 99
Comprehensive Investigations on Paralleling Operation of SiC MOSFETs based on Subcircuit Model in MATLAB/SIMULINK
Yuqi Wei/UNIVERSITY OF ARKANSAS
口头报告
09:15 09:30 15 89
A Compact Model for Si/SiC IGBT in LTspice with Experimental Validation
Md Maksudul Hossain Graduate Research As/UNIVERSITY OF ARKANSAS
口头报告
09:30 09:45 15 Coffee Break
WBG Device Reliability
Chair: Meng Huang, Wuhan University / Qing Guo, Zhejiang University
09:45 10:00 15 114
Analysis of GaN HEMT Degradation under RF Overdrive Stress
YiQiang Chen/The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology；YuHan Xie/,South China University of Technology
口头报告
10:00 10:15 15 116
Analysis of the influence of vibration and thermal vibration coupling on the power module
JiaJia Guan/Huazhong University of Science and Technology
口头报告
10:15 10:30 15 85
Investigation of the Insulation Failure of Power Modules by Observation of Electrical Trees
Kaixuan Li Doctoral Candidate/XJTU
口头报告
10:30 10:45 15 86
Failure Analysis of 200V p-GaN HEMT under Unclamped Inductive Switching Conditions
Xuan Li/University of Electronic Science and Technology of China
口头报告
10:45 11:00 15 110
Characteristics of SiC MOSFET in a Wide Temperature Range
Mengyu Zhu/Xi'an Jiaotong University
口头报告
S3&S4

WBG Device Applications, Package Design & Analysis@Oral Session 1

2021年08月27日 14:00~17:30

ZOOM会议 进入会议室

视频会议 口头报告

时刻表 V13 发布时间：2021-09-01 08:33:01

开始 结束 持续 编号 标题
WBG Device Applications
Chair: Xuehua Wang, Huazhong University of Science and Technology / Haoze Luo, Zhejiang University
14:00 14:15 15 82
A Predictive Method for Switching Time of Nanosecond Pulsed Power System of Ohmic Loads Using SiC MOSFETs
Xin Li/Naval University of Engineering
口头报告
14:15 14:30 15 90
Analysis of an Output Series High Voltage Gain Impedance Source Circuit Based on SiC Switch
Qing Cheng/China,School of Electrical Engineering and Automation, Harbin Institute of Technology, Harbin
口头报告
14:30 14:45 15 80
Homogeneous-Flux Transmitter Coil Design with Improved Position Tolerance
Yunfeng Liu/Department of Electrical Engineering, Technical University of Denmark
口头报告
14:45 15:00 15 72
An Accurate Analytical Model for Motor Terminal Overvoltage Prediction and Mitigation in SiC Motor Drives
Neng Wang/Huazhong University of Science and Technology
口头报告
15:00 15:15 15 88
Adaptive Digital Technique Assisted Hard Switching Fault Detection for SiC MOSFETs
Saravanan Dhanasekaran Research Scholar/Indian Institute of Technology Madras
口头报告
15:15 15:30 15 Coffee Break
WBG Device Package Design & Analysis
Chair: Jianing Wang, Hefei University of Technology / Cai Chen, Huazhong University of Science and Technology
15:30 15:45 15 109
Comparison Study of Parasitic Inductance, Capacitance and Thermal Resistance for Various SiC Packaging Structures
Yifan Zhang/Huazhong University of Science and Technology
口头报告
15:45 16:00 15 93
A Layout Optimization Method to Reduce Commutation Inductance of Multi-Chip Power Module Based on Genetic Algorithm
Yu Zhou PhD Student/Zhejiang University
口头报告
16:00 16:15 15 77
A High Power Density Chip-on-Chip Gan-based Module with Ultra-Low Parasitic Inductance
Yi Zhang/Huazhong University of Science and Technology,State Key Laboratory of Advanced Electromagnetic Engineering and Technology
口头报告
16:15 16:30 15 100
15kV Press Pack SiC IGBT
yujie du/,Global Energy Interconnection Research Institute Co.,ltd
口头报告
16:30 16:45 15 71
Analysis of Dynamic Current Balancing in Multichip SiC Power Modules Based on Coupled Parasitic Network Model
Yuxin Ge/Huazhong University of Science and Technology
口头报告
16:45 17:00 15 98
Power Loop Inductance Extraction with High Order Polynomial Fitting Algorithm for SiC MOSFET Power Module Characterization
Zhikun Wang/Fudan University
口头报告
重要日期

  • 会议日期

    08月25日

    2021

    至

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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