A Predictive Method for Switching Time of Nanosecond Pulsed Power System of Ohmic Loads Using SiC MOSFETs
编号:82 访问权限:仅限参会人 更新:2021-07-21 20:05:58 浏览:225次 口头报告

报告开始:2021年08月27日 14:00(Asia/Shanghai)

报告时间:15min

所在会场:[Room1] Oral Session 1 [S3&S4] WBG Device Applications, Package Design & Analysis

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摘要
In this paper, a predictive method for accurately determining the switching time of nanosecond pulsed power system is proposed, which is important to evaluate and better design higher-grade pulse power system. Compared to the traditional predictive method of switching time, the ohmic loads and nonlinearity of capacitances are considered in the proposed method. In detail, the expressions of the switching time are deduced, in which, the main parasitic elements affecting the switching transient are considered. In order to verify the validity of the method, an ohmic-load double pulse circuit is established. The experimental device is a CREE SiC MOSFET module CAS325M12HM2 (1200V/325A). The predictive results of the proposed method are compared with experiments and the traditional predictive method under different voltages and currents. The comparison results show that the proposed method has a good agreement with experiments and has better predictive accuracy than the traditional method, which verifies the effectiveness and accuracy. The method of prediction the switching time of nanosecond pulsed power system of ohmic loads using SiC MOSFETs offers a theoretical reference to evaluate and improve pulse power systems.
关键词
SiC MOSFETs,Nanosecond Pulsed Power System,Switching Time,Predictive Algorithm
报告人
Xin Li
Naval University of Engineering

稿件作者
Yifei Luo National Key Laboratory of Science and Technology on Vessel Integrated Power System
Xin Li Naval University of Engineering
Fei Xiao Naval University of Engineering
Zenan Shi State Key Laboratory of Electrical Insulation and Power Equipment
Ruitian Wang National Key Laboratory of Science and Technology on Vessel Integrated Power System
Feng Xie Naval University of Engineering
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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