Adaptive Digital Technique Assisted Hard Switching Fault Detection for SiC MOSFETs
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更新:2021-08-14 09:41:54
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摘要
This paper presents a Hard Switching Fault (HSF) detection technique for SiC MOSFETs. The reliability of SiC MOSFETs under short circuit conditions is a crucial concern and can lead to failure. The proposed method uses only the device voltage sensing to detect the HSF condition. Instead of fixed blanking time present in the desaturation method, the proposed method adaptively changes the blanking time during every switching cycle. By this, faster detection of the shoot-through event can be achieved and it can reduce the magnitude of the fault peak current. The experimental verification of the proposed method was carried with a discrete 1kV, 32A SiC MOSFET. The results show satisfactory operation of the proposed method,where the HSF event is detected within few tens of nanoseconds.
关键词
Short-circuit test;HSF;Hard Swiching Fault;SiC MOSFET;Adaptive Time
稿件作者
Saravanan Dhanasekaran
IIT Madras
Vamshi Krishna Miryala
Indian Institute of Technology Madras
Kamalesh Hatua
Indian Institute of Technology Madras
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