Power Loop Inductance Extraction with High Order Polynomial Fitting Algorithm for SiC MOSFET Power Module Characterization
编号:98 访问权限:仅限参会人 更新:2021-07-21 20:06:09 浏览:240次 口头报告

报告开始:2021年08月27日 16:45(Asia/Shanghai)

报告时间:15min

所在会场:[Room1] Oral Session 1 [S3&S4] WBG Device Applications, Package Design & Analysis

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摘要
An accurate method for extracting the power loop parasitic inductance with high order polynomial fitting algorithm is proposed for the SiC MOSFET power module characterization. The power loop inductance distribution of the SiC MOSFET power module double pulse test platform is illustrated. The stray inductance is characterized using 5 sorts of approaches with integral method, differential method, least squares fitting method, sliding mean filtering algorithm and high order polynomial fitting algorithm at 400V/150A-570A. The experimental results using the existing 4 methods show relative errors more than 21.09nH from 8.17nH to 48.53nH compared to the tested inductance by impedance analyzer. Extracting inductance using high order polynomial fitting algorithm ranges from 30.42nH to 32.54nH at both low and high cureent, and the deviation is from 3.34nH to 5.50nH. Considering the inductance of the probe, the module contact terminal and the bus capacitor, the calculated results are consistent with the test result of 27.20nH. The parasitic inductance of 28.21nH simulated by ANSYS Q3D validates the accuracy of the proposed method. The fitted lines with the calculated stray inductance and di/dt match with the drain-to-source voltage of SiC MOSFET power module at both turn-on and turn-off transient.
 
关键词
Power Loop Inductance,SiC MOSFETs Modules,High Order Polynomial Fitting Algorithm,Switching Characterization
报告人
Zhikun Wang
Fudan University

稿件作者
Zhikun Wang Fudan University
Saijun Mao Fudan University
Shuhao Yang Fudan University
Wenyu Li Fudan University
Ding Yujie Fudan University
Xi Lu UniSiC Technology (Shanghai) Co., Ltd.
Jun Chen UniSiC Technology (Shanghai) Co., Ltd.
Keqiu Zeng Philips Healthcare (Suzhou) Co., Ltd.
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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