A Compact Model for Si/SiC IGBT in LTspice with Experimental Validation
编号:89 访问权限:仅限参会人 更新:2021-08-15 14:05:29 浏览:277次 口头报告

报告开始:2021年08月27日 09:15(Asia/Shanghai)

报告时间:15min

所在会场:[Room1] Oral Session 1 [S1&S2] WBG Device Modeling, Simulation and Reliability

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摘要
A well-established unified physics-based IGBT compact model has been implemented in LTspice, a SPICE simulator from Analog Devices which is a freely available and well-established circuit simulator. A 12.5kV n-channel SiC IGBT, a 13-kV p-channel SiC IGBT, and a 1200V/60A field stop Si IGBT from IXYS have been used in this paper for model verification. The parameters have been extracted with ICCAP software using LTspice as an external simulator. This model unifies both Si and SiC IGBT models for both n and p-channel devices that add to the flexibility of a circuit designer. This paper presents an LTspice implementation of a model published in [3]. It provides a very accurate description of the MOS channel, bipolar transistor, and nonlinear capacitances for both Si and SiC IGBTs. It also includes temperature scaling features, along with a solid but simple datasheet-driven parameter extraction method.
关键词
Simulation,Insulated Gate Bipolar Transistor (IGBT),LTspice,Semiconductor device characterizations and Modeling.,power electronic devices
报告人
Md Maksudul Hossain
Graduate Research As UNIVERSITY OF ARKANSAS

稿件作者
Md Maksudul Hossain UNIVERSITY OF ARKANSAS
Arman Ur Rashid UNIVERSITY OF ARKANSAS
Yuqi Wei UNIVERSITY OF ARKANSAS
Alan Mantooth UNIVERSITY OF ARKANSAS
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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