Characteristics of SiC MOSFET in a Wide Temperature Range
编号:110 访问权限:仅限参会人 更新:2021-07-21 20:06:16 浏览:307次 口头报告

报告开始:2021年08月27日 10:45(Asia/Shanghai)

报告时间:15min

所在会场:[Room1] Oral Session 1 [S1&S2] WBG Device Modeling, Simulation and Reliability

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摘要
In order to expand the application of SiC MOSFET in a wide temperature range, the performance of SiC MOSFET from 25 °C to 425 °C is studied in this paper by taking the 1.2 kV QPM3-1200-0013D as an example. Different from the device characteristics given in the data sheet or previous articles at only three discrete temperatures or temperatures below 250 °C, the temperature-dependent static characteristics of SiC MOSFET are remeasured and nonlinearly characterized in a wide temperature
range in this paper. In addition, considering the improvement effect of SiC Schottky barrier diode on the reliability of SiC MOSFET’s body diode, the temperature-dependent static characteristics of SiC Schottky barrier diode are also analyzed in this paper, which provides guidance for the high-temperature pre-design and application of SiC MOSFET.
关键词
SiC MOSFET,Schottky barrier diode (SBD),High Temperature
报告人
Mengyu Zhu
Xi'an Jiaotong University

稿件作者
Mengyu Zhu Xi'an Jiaotong University
Laili Wang Xi'an Jiaotong University
Huaqing Li Xi'an Jiaotong University
Chengzi Yang Xi'an Jiaotong University
Dingkun Ma Xi'an Jiaotong University
Fengtao Yang Xi'an Jiaotong University
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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