Investigation of the Insulation Failure of Power Modules by Observation of Electrical Trees
编号:85 访问权限:仅限参会人 更新:2021-07-21 20:06:00 浏览:194次 口头报告

报告开始:2021年08月27日 10:15(Asia/Shanghai)

报告时间:15min

所在会场:[Room1] Oral Session 1 [S1&S2] WBG Device Modeling, Simulation and Reliability

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摘要
With the increasing of voltage, the electric field has been distorted severely in insulated gate bipolar transistor (IGBT) modules. When the distorted electric field is last for a long time, it will cause the modules to insulation failure. The failure is origin from the defects, such as the growth of electrical trees. The defects locate at the junctions of the copper layer, ceramic substrate, and silicone gel. These junctions are defined as designing defects. And at the edge of the designing defects, there are a series of processing defects, such as hollows and protrusions. These processing defects lead the modules to insulation failure. However, not all of processing defects are the origin of the electrical trees. The relationship between the behaviours of discharges and those processing defects is still unclear. In this regard, this paper presents an experimental study of the origin of insulation failure in power modules. The ceramic, copper and silicone gel are considered in this study. Insulation failure is equivalent to the growth of electrical trees. And the electrical trees are observed by using a stereo-microscope. The influence of the processing defects on the origin of the electrical trees is analysed. The results show that nearly all of the protrusions defects become the root of the electrical trees. For the hollow defect, this is not the case. This means that protrusions defects are more likely to lead to failure than hollow defects. The protrusions defects must be avoided to generate during the processing.
 
关键词
packaging,DBC,insulation,fault
报告人
Kaixuan Li
Doctoral Candidate XJTU

稿件作者
Kaixuan Li XJTU
Boya Zhang XJTU
Xingwen Li XJTU
Haotao Ke CRRC
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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